The D882 (2SD882) is a versatile medium-power NPN bipolar transistor. Compact in a TO-126 package, it delivers up to 3 A of collector current, a VCEO around 30 V, and decent power dissipation. This article will discuss the D882’s overview, specifications, pinout, alternatives, circuit roles, characteristic curves, and more.

The D882 (2SD882 ) is a medium-power NPN bipolar transistor commonly used for switching and amplification. Designed by STMicroelectronics and others, it offers a balance between current handling and efficiency. With a collector current up to 3 A, VCEO around 30 V, and power dissipation of about 10–12 W, it suits applications that require more strength than small-signal BJTs but less bulk than high-power transistors. Its TO-126 package provides solid thermal performance, while its gain range (hFE 60–400) ensures dependable operation in driver circuits, regulators, and audio stages.
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| Pin Number | Pin Name | Description |
| 1 | Base (B) | Controls the transistor; used to trigger switching. |
| 2 | Collector (C) | Main current input; connects to the load. |
| 3 | Emitter (E) | Current output; usually connected to ground or negative rail. |
| Model | Type | Max Current (A) | Max Voltage (V) |
| D882 | NPN | 3 A | 30 V |
| TIP31 / TIP31A /B/C | NPN | 3–4 A | 40–100 V |
| BD679 | NPN Darlington | 4 A | 80 V |
| 2SD882 (variants) | NPN | 3 A | 30 V |
| 2N6491 | NPN | 4 A | 60 V |
| BD139 (low-power alt.) | NPN | 1.5 A | 80 V |
| MJE3055T | NPN | 10 A | 60 V |
| 2N3055 (heavier duty) | NPN | 15 A | 60 V |
| Parameter | Value |
| Manufacturer | STMicroelectronics |
| Part Status | Active |
| Transistor Type | NPN |
| Collector Current (Ic) Max | 3 A |
| Collector-Emitter Breakdown Voltage (Vceo) | 30 V |
| Vce Saturation (Max) @ Ib, Ic | 1.1 V @ 150 mA, 3 A |
| Collector Cutoff Current (Max) | 100 µA |
| DC Current Gain (hFE) Min @ Ic, Vce | 100 @ 100 mA, 2 V |
| Power Dissipation (Max) | 12.5 W |
| Transition Frequency (fT) | 100 MHz |
| Operating Temperature | 150°C (Tj) |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Supplier Device Package | SOT-32 (TO-126) |
| Base Product Number | 2SD8 |
| Parameter | Value |
| Collector-Base Voltage (VCBO) | 60 V |
| Collector-Emitter Voltage (VCEO) | 30 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 3 A |
| Collector Peak Current (ICM, <5 ms) | 6 A |
| Base Current (IB) | 1 A |
| Base Peak Current (IBM, <5 ms) | 2 A |
| Total Power Dissipation (PTOT) | 12.5 W |
| Storage Temperature (TSTG) | –65 to 150°C |
| Max Junction Temperature (TJ) | 150°C |

In this circuit, the D882 transistor operates as a basic audio amplifier, boosting the small signal coming from the AUX input. The audio signal enters the transistor's base, where even a weak input can control a much larger current flowing from the collector to the emitter. This amplified output drives the speaker, making the audio loud and clear. The 1K resistor limits the current to protect the transistor, while the 16V 100µF capacitor blocks DC and passes only the AC audio signal. Overall, the D882 increases the signal strength enough to power the speaker using only a low-level audio source.

In the touch or signal sensor circuit, the D882 acts as a sensitive electronic switch that activates the LED when a tiny voltage is detected at the sensing points. A small current applied to the base through the 100Ω resistor causes the transistor to turn on, allowing a larger current to flow from the supply through the LED. The LED lights up only when the sensor points detect a small signal or touch input. The D882 amplifies this small base current into a larger collector-emitter current, making it ideal for simple detection circuits that require sensitivity and fast switching response.

In the motor-driving circuit, the D882 (similar to D880 shown) functions as a power switch that controls a motor using a small input signal. When the base receives a voltage through the 1K resistor, the transistor turns on, allowing a high current to flow from the 12V supply through the motor and the collector-emitter path. This enables the transistor to drive the motor even with weak input signals. The diode (1N4004) is placed across the motor to absorb back-EMF spikes generated when the motor turns off, protecting the transistor. Here, the D882 serves as a reliable driver for inductive loads like DC motors.

This curve shows the maximum safe combinations of collector current (IC) and collector-emitter voltage (VCE) when the D882 is switching inductive loads in reverse-biased conditions. At low VCE, the transistor can handle peak currents up to about 6 A, but as VCE increases, the allowable current decreases to avoid breakdown or thermal stress. The curve helps designers ensure the transistor operates safely during switching events, particularly when driving motors, coils, or transformers where voltage spikes occur.
This graph shows how the transistor’s DC current gain (hFE) varies with collector current at different junction temperatures. At room temperature (25°C), hFE remains relatively stable across moderate current levels, but it decreases when the transistor operates at very low or very high currents. Higher temperature increases gain slightly, while lower temperature reduces it. This helps determine the appropriate base drive needed for reliable switching or amplification in different operating conditions.

This curve illustrates how the saturation voltage rises as the collector current increases. At low currents, VCE(sat) stays very low, meaning the transistor conducts efficiently with minimal voltage loss. As current rises toward several amperes, the saturation voltage increases, causing more power dissipation and heat. Temperature also affects this value, with higher temperatures slightly lowering the saturation voltage. This graph helps designers estimate conduction losses when the D882 is used as a switch.
This graph shows how much base-emitter voltage is required to fully saturate the transistor at various collector currents. At low currents, only about 0.5–0.6 V is needed, but at high currents, VBE(sat) can approach 1.0 V. Temperature impacts this voltage: lower temperatures require higher VBE, while higher temperatures reduce it. Understanding this curve helps ensure the base drive signal is strong enough to keep the transistor fully turned on under different load conditions.