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The MPSA06 NPN transistor is a widely used general-purpose device valued for its reliable performance in amplification, switching, and high-voltage signal applications. This article will discuss the MPSA06 transistor’s features, pinout, specifications, applications, performance curves, test circuits, and practical usage.
The MPSA06 is a versatile NPN bipolar junction transistor designed for medium-voltage, general-purpose amplification and switching tasks. With its 80 V collector-emitter rating and up to 500 mA collector current capability, it handles audio-frequency amplification, driver stages, and moderate-power loads with ease. Its typical gain of around 100 and transition frequency nearing 100 MHz make it suitable for clean signal handling in analog circuits while maintaining reliable switching performance.
Its TO-92 package offers ease of mounting, though thermal limits should be observed during higher-current operation. Paired with complementary PNP transistors like the MPSA56, it becomes a robust component for balanced amplifier designs and general electronics projects.
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| Pin Number | Pin Name | Description |
| 1 | Emitter (E) | Current flows out through this terminal; typically connected to ground in NPN circuits. |
| 2 | Base (B) | Controls the transistor’s operation; a small current here allows a larger current to flow from collector to emitter. |
| 3 | Collector (C) | Main current input terminal; connects to the load in switching or amplification circuits. |
| Equivalent Part | Key Specs |
| 2N5551 | High-voltage NPN (~160 V), moderate current |
| BC538-16 / BC538-25 | TO-92 package, similar gain, ~80–100 V rating |
| 2SC2882 | High-voltage NPN transistor |
| 2N4401 | General-purpose NPN (~40–60 V) |
| MPSA42 | High-voltage NPN (100+ V) |
| MJE340 | Higher-power NPN, 300 V rating |
In this circuit, the MPSA06 transistor functions as a key switching component that drives the LED using energy from a low 1.5V supply. The combination of inductors L1 and L2, resistor R1, and capacitor C1 forms an oscillating boost converter. When the transistor switches on and off rapidly, the inductors store and release energy, increasing the voltage to a level high enough to light the LED even though the power source is only 1.5V.
The resistor R1 provides the proper base bias for the MPSA06, ensuring the transistor switches efficiently. Capacitor C1 helps shape the oscillation frequency, while the coupled inductors boost the output voltage. As the transistor repeatedly turns on and off, the LED receives short high-voltage pulses, allowing it to illuminate from a very low input voltage.
| Parameter | Value |
| Manufacturer | ON Semiconductor (onsemi) |
| Transistor Type | NPN |
| Collector Current (Ic) Max | 500 mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 80 V |
| Collector-Base Breakdown Voltage (Vcbo) | 80–90 V (typical) |
| Emitter-Base Breakdown Voltage (Vebo) | 4–5 V |
| VCE Saturation (Max) | 250 mV @ Ic = 100 mA, Ib = 10 mA |
| Collector Cutoff Current (Ico Max) | 100 nA |
| DC Current Gain (hFE) | 100 (min) @ Ic = 100 mA, Vce = 1 V |
| hFE Range (General) | 100 – 300 depending on test conditions |
| Power Dissipation (Ptot) | 625 mW |
| Transition Frequency (fT) | 100 MHz |
| Noise Figure | Typically 4 dB |
| Operating Temperature | –55°C to +150°C |
| Package Type | TO-92, TO-226 |
| Mounting Type | Through-Hole |
| Pin Configuration | 1: Emitter, 2: Base, 3: Collector |
| Base Product Number | MPSA06 |
These diagrams show how the MPSA06 transistor is tested for its turn-on and turn-off switching times. In the turn-on test circuit, a fast input pulse is applied to the base through RB. The transistor begins conducting when the base receives the rising edge of the pulse, causing current to flow through the collector load resistor RL. This allows measurement of how quickly the transistor switches from the off state to the on state. A small test capacitance (CS) is included to represent stray capacitance in real applications.
In the turn-off test circuit, the input pulse falls, removing base drive and forcing the transistor to stop conduction. The circuit measures how long it takes for the transistor to stop allowing collector current and return to the off state. Both circuits use standardized component values to ensure that the switching speed of the MPSA06 can be accurately compared and characterized in datasheets.
This graph shows how the MPSA06’s transition frequency (fT) changes with collector current. As the collector current increases from a few milliamps, the transistor’s bandwidth improves, reaching a peak of around 200–250 MHz between roughly 20 mA and 70 mA. This peak indicates the range where the transistor operates with its highest high-frequency performance. Beyond this region, fT begins to drop as the device experiences internal limitations. This curve helps designers choose the optimal operating current when using the MPSA06 in high-speed switching or amplifier stages.
The capacitance graph shows how the transistor’s internal junction capacitances vary with reverse voltage. As the reverse voltage increases, both the collector-base capacitance (Cibo) and the collector-emitter capacitance (Cobo) decrease. Lower capacitance at higher voltages improves switching speed and reduces signal distortion, which is important in high-frequency applications. These curves help predict how the MPSA06 will behave in fast circuits and assist in selecting proper biasing for stable performance.
General-purpose signal amplification
Low to medium-power switching circuits
Audio preamplifier and driver stages
LED drivers and voltage booster circuits
High-voltage, low-current switching applications
Oscillator and timing circuits
Push-pull amplifier configurations (paired with MPSA56)
Relay and small solenoid drivers
Battery-powered step-up converter circuits
High-speed switching due to its 100 MHz transition frequency
Sensor interface and conditioning circuits
DIY electronics and educational transistor projects
Use in analog processing stages requiring stable gain
Small motor and inductive load control (within current limits)
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
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