The MPSA13 is a widely used NPN Darlington transistor known for its exceptionally high current gain and its ability to amplify very small signals into strong, usable outputs. This article will discuss the MPSA13 device’s specifications, characteristics, operation in circuits, applications, and more.

The MPSA13 is a high-gain NPN Darlington transistor designed for applications requiring strong amplification from a very small input signal. With two transistors connected internally in a Darlington configuration, it delivers exceptionally high current gain - often above 5000 - making it ideal for driving relays, LEDs, small motors, and other moderate loads. It operates up to 30 V and supports collector currents up to 0.5 A, making it reliable for a wide range of switching and signal-control circuits. Because of its Darlington design, the MPSA13 requires a higher base-emitter voltage and has a higher saturation voltage compared to standard single transistors.
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| Pin Number | Pin Name | Description |
| 1 | Emitter (E) | Current flows out through this pin; connected to ground or negative side of the load in most circuits. |
| 2 | Base (B) | Input control pin that regulates the transistor’s switching and amplification. |
| 3 | Collector (C) | Main current input; connected to the positive side of the load. |
| Model | Type |
| 2N5306 | NPN Darlington |
| 2N5525 | NPN Darlington |
| MPSA14 | NPN Darlington |
| MPSA12 | NPN Darlington |
| 2N6043 | NPN Darlington |
| TIP120 | NPN Darlington |
| Parameter | Value |
| Lifecycle Status | Obsolete |
| Package / Case | TO-92 |
| Mount Type | Through-Hole |
| Number of Pins | 3 |
| Weight | 201 mg |
| Polarity | NPN |
| Element Configuration | Single |
| Number of Elements | 1 |
| Collector-Emitter Breakdown Voltage (VCEO) | 30 V |
| Collector-Base Voltage (VCBO) | 30 V |
| Emitter-Base Voltage (VEBO) | 10 V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.5 V |
| Continuous Collector Current (IC) | 500 mA |
| Max Collector Current | 100 mA |
| Current Rating | 100 mA |
| Power Dissipation | 350 mW |
| Max Power Dissipation | 625 mW |
| hFE (min gain) | 10,000 |
| Transition Frequency (fT) | 125 MHz |
| Voltage Rated DC | 30 V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Length | 5.2 mm |
| Height | 5.33 mm |
| Width | 4.19 mm |
| Published | 2004 |
| RoHS Status | RoHS Compliant |
| Lead-Free | Yes |
| Packaging | Bulk |

In this circuit, the MPSA13 NPN Darlington transistor (Q3) works as a high-gain booster stage, amplifying very small input signals from IN1. Because the MPSA13 has extremely high current gain, it can take a weak guitar or audio signal and boost it enough to drive the following MOSFET stage. The input signal passes through C3 and R9 before reaching the base of the MPSA13, ensuring the transistor only receives the AC signal while DC biasing stays stable.
When the signal enters Q3’s base, the Darlington configuration provides strong amplification, causing a much larger current to flow from the collector through R5 and R6. This boosted signal then drives the 2N7000 MOSFET (Q1), shaping and strengthening the output tone. The diodes and capacitors around the circuit provide filtering, protection, and additional dynamic shaping.

This curve shows how the transistor’s input-referred noise voltage varies with frequency for different collector currents. At low frequencies, the noise is dominated by 1/f (flicker) noise, resulting in a steep rise as frequency decreases. As frequency increases, the curve flattens, indicating the white-noise region where noise becomes essentially constant. Higher collector currents generally reduce the noise voltage, making the device quieter when biased at higher current levels.
The noise current curves illustrate how input-referred noise current changes with frequency and collector current. At low frequencies, noise current is relatively small, but it increases with frequency due to rising shot noise and other high-frequency mechanisms. Larger collector currents produce higher noise current because shot noise is proportional to the square root of current. These curves help in choosing an operating current that balances gain and noise performance.

This graph plots the transistor’s junction capacitances as the reverse bias voltage increases. Both collector-base capacitance (Cibo) and collector-emitter capacitance (Cobo) decrease as reverse voltage is raised, a common behavior of semiconductor junctions. The reduction in capacitance with voltage is important for high-frequency performance, as lower capacitance improves bandwidth and reduces signal loading.
The high-frequency current-gain curve shows how the transistor’s gain behaves with collector current at 100 MHz. Gain increases with current up to a peak value, after which it gradually falls due to high-injection effects and transit-time limitations. This plot helps identify the optimal collector current range for maximum high-frequency performance, especially when the device is used in fast switching or RF applications.
Signal amplification for low-level or weak input signals
High-gain audio preamplifiers
Sensor signal conditioning (photodiodes, microphones, small sensors)
Darlington switching stages for driving higher loads
Relay, solenoid, and small motor drivers
LED arrays or high-brightness LED driving
Digital interface level shifting
Low-frequency analog circuits
Control circuits in automation and hobby electronics
General-purpose switching and amplification in low-power systems

Very high current gain (Darlington pair structure), typically 5000+
Strong switching capability, suitable for driving relays, LEDs, and small motors
Low input current requirement due to high gain
Useful for amplifying very small signals
Good for low-frequency applications
Easy to interface with microcontrollers thanks to low base drive needs
Widely available and inexpensive
Higher saturation voltage (VCE(sat)) because of Darlington configuration
Slower switching speed compared to single transistors due to extra junction
Higher leakage currents
Not suitable for high-frequency applications
Thermal performance can be limited if used at higher collector currents
Requires attention to base-emitter voltage, which is ~1.2–1.4 V (higher than a single BJT)