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SS9014 Bipolar NPN Transistor Pinout, Alternatives, Specifications

FREE-SKY (HK) ELECTRONICS CO.,LIMITED / 11-24 17:09

The SS9014 is a versatile small-signal NPN bipolar junction transistor widely used in low-level amplification, switching, and RF applications. This article will talk about the SS9014 transistor’s key features, specifications, typical characteristics, practical application circuits, and more.


Catalog

1. SS9014 Bipolar NPN Transistor
2. SS9014 NPN Transistor Alternatives
3. SS9014 Transistor Pinout
4. SS9014 NPN Transistor Specifications
5. SS9014 NPN Transistor Features
6. Utilizing SS9014 NPN Transistors
7. SS9014 NPN Typical Characteristics
8. SS9014 NPN Transistor Applications
9. Comparison: SS9014 vs. BC547B
10. SS9014 Transistor Mechanical Drawing
11. Manufacturer
12. Conclusion
SS9014

SS9014 Bipolar NPN Transistor

The SS9014 is a small-signal NPN bipolar junction transistor designed for low-level amplification and switching applications. It typically operates with a collector-emitter voltage of around 45V and can handle up to 100mA of collector current, making it suitable for driving LEDs, sensors, and other low-power loads. Its transition frequency near 150MHz allows it to perform well in audio and radio-frequency circuits.

This transistor is commonly found in TO-92 and SOT-23 packages, offering flexibility for both through-hole and surface-mount designs. With a power dissipation rating typically between 200mW and 450mW, it performs best in circuits where heat is well-managed. The SS9014 is frequently used in audio pre-amplifiers, signal processing, and general-purpose switching circuits due to its stable gain characteristics and low noise performance.

If you are interested in purchasing the SS9014 product model, feel free to contact us for pricing and availability.

SS9014 NPN Transistor Alternatives

Model
Type
VCEO Max
IC Max
KSP06
NPN
80V
500mA
KSP42
NPN
300V
500mA
MPSA42
NPN
300V
500mA
MPSW06
NPN
80V
1A
BC549
NPN
30V
100mA
BC636
NPN
80V
1A
BC639
NPN
80V
1A
BC547
NPN
45V
100mA
2N2369
NPN
15V
200mA
2N3055
NPN
60V
15A
2N3904
NPN
40V
200mA
2N3906
PNP
40V
200mA
2SC5200
NPN
230V
15A
2N5551
NPN
160V
600mA

SS9014 Transistor Pinout

SS9014 Transistor Pinout

Pin Number
Pin Name
Function  
1
Emitter
Current flows out of the transistor; usually connected to ground in NPN circuits.
2
Base
Controls the transistor switching; a small current applied here regulates a larger current between collector and emitter.
3
Collector
Main current input; connected to the load in most switching or amplification circuits.

SS9014 NPN Transistor Specifications

Absolute Maximum Ratings

Symbol
Parameter
Rating
Units
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IcCollector Current
100
mA
PcCollector Power Dissipation
450
mW
TjJunction Temperature
150
°C
TSTG
Storage Temperature
−55 to +150
°C

Electrical Characteristics

Parameter
Test Condition  
Values (Min / Typ / Max)
Units
Collector-Base Breakdown Voltage (BVCBO)
IC = 100µA, IE = 0
Min: 50
V
Collector-Emitter Breakdown Voltage (BVCEO)
IC = 1mA, IB = 0
Min: 45
V
Emitter-Base Breakdown Voltage (BVEBO)
IE = 100µA, IC = 0
Min: 5
V
Collector Cut-off Current (ICBO)
VCB = 50V, IE = 0
Max: 50
nA
Emitter Cut-off Current (IEBO)
VEB = 5V, IC = 0
Max: 50
nA
DC Current Gain (hFE)
VCE = 5V, IC = 1mA
Min: 60 / Typ: 280 / Max: 1000

VCE(sat)
IC = 100mA, IB = 5mA
Typ: 0.14 / Max: 0.30
V
VBE(sat)
IC = 100mA, IB = 5mA
Typ: 0.84 / Max: 1.0
V
VBE(on)
VCE = 5V, IC = 2mA
Min: 0.58 / Typ: 0.63 / Max: 0.70
V
Output Capacitance (Cob)
VCB = 10V, f = 1MHz
Typ: 2.2 / Max: 3.5
pF
Current Gain Bandwidth (fT)
VCE = 5V, IC = 10mA
Min: 150 / Typ: 270
MHz
Noise Figure (NF)
VCE = 5V, IC = 0.2mA, f = 1kHz, RS = 2kΩ
Min: 0.9 / Max: 10
dB

SS9014 NPN Transistor Features

Small-signal NPN bipolar junction transistor (BJT)

Suitable for low-noise amplification and switching applications

Collector-Emitter Voltage (VCEO): 45V maximum

Collector Current (Ic): 100mA maximum

High DC Current Gain (hFE): up to 1000 depending on classification

Low output capacitance for improved high-frequency performance

High transition frequency (fT): up to 270MHz

Low collector and emitter cutoff currents for efficient signal control

Available in TO-92 package (commonly used in through-hole designs)

Utilizing SS9014 NPN Transistors

Utilizing SS9014 NPN Transistors

A typical SS9014 pre amplifier configuration includes four biasing resistors and two coupling capacitors arranged to ensure smooth AC signal flow and stable transistor operation. The input signal passes through capacitor C1 and enters the base of Q1, the SS9014 transistor. The collector connects to VCC through resistor R1, while the amplified output is coupled through capacitor C2. The emitter connects to ground through resistor R2. Meanwhile, resistors R3 and R4 form a voltage divider that provides the correct base bias, allowing the transistor to operate in its active region and reduce distortion.

To calculate resistor values, begin by selecting the desired collector current IC. Then determine the base current by dividing IC by the transistor’s current gain hFE. Using these values, choose appropriate resistor values for stable operation. A sample calculation approach is Ib = Ic / hFE, followed by determining bias resistor values to maintain consistent operating conditions. Proper biasing ensures clean amplification and prevents shifts that lead to clipping or noise.

The SS9014 offers several benefits in audio amplification, including low noise performance for clearer sound reproduction, high gain for strong signal lifting, and reliable function in low-voltage electronic designs. Its availability and affordability make it a preferred choice for both learning applications and professional audio circuitry.

SS9014 NPN Typical Characteristics

SS9014 NPN Typical Characteristics

Figure 1. Static Characteristic

This graph shows the relationship between the collector current (IC) and the collector-emitter voltage (VCE) for different base currents (IB). Each curve represents a constant base current value. As VCE increases, IC rises quickly at first and then levels out, indicating the transistor is entering the active region. Higher base current results in proportionally higher collector current, demonstrating the transistor’s current amplification behavior. The flatter part of each curve reflects that once in the active region, the collector current becomes largely independent of VCE.

Figure 2. DC Current Gain (hFE)

This diagram shows how the DC current gain varies with collector current at VCE = 5V. At low collector current, hFE increases and then stays relatively stable across a broad current range, indicating efficient amplification. As the collector current approaches higher values, the gain begins to decrease, meaning the transistor becomes less effective at amplifying current when heavily loaded.

SS9014 NPN Typical Characteristics

Figure 3. Base-Emitter and Collector-Emitter Saturation Voltage

This figure illustrates how the saturation voltages VBE(sat) and VCE(sat) change with increasing collector current. Saturation occurs when the transistor is fully ON, and further increase in base drive cannot increase collector current significantly. VCE(sat) typically remains low, indicating a small voltage drop in saturation, which makes the transistor useful as a switching device. VBE(sat) increases slowly with current, showing the base-emitter junction requires a higher forward bias at larger currents.

Figure 4. Current Gain Bandwidth Product (fT)

This plot shows the transition frequency fT versus collector current, again at VCE = 5V. The value of fT represents the frequency at which the transistor’s current gain reduces to 1. As collector current increases, fT rises to a peak, indicating the transistor achieves its best high-frequency performance around that operating current. After exceeding the optimal current region, fT declines, showing a loss of high-frequency amplification capability.

SS9014 NPN Transistor Applications

Signal Amplification - The SS9014 can amplify weak audio, sensor, or RF signals in pre-amplifier and low-noise amplifier stages of radios, intercoms, and small audio devices. Its relatively high gain and low noise help maintain signal quality.

General-Purpose Switching - It is often used as a low-power switch controlled by a microcontroller, logic gate, or sensor. The transistor can drive relays, LEDs, or small motors by allowing a low base current to control a higher load current.

Oscillator and Timing Circuits - Because of its good frequency response, the SS9014 works well in oscillators, waveform generators, timers, and clock circuits used in communication and control systems.

Voltage Regulation and Level Shifting - The SS9014 can be found in simple voltage regulators, feedback circuits, and level-shifting stages where signals must transition between logic levels or reference voltages.

RF and Communication Circuits - With a transition frequency (fT) reaching into the hundreds of MHz range, it can be used in low-power RF amplifiers, IF stages, and receiver front-ends in wireless modules.

Comparison: SS9014 vs. BC547B

Feature  
SS9014
BC547B
Package Type
TO-92
TO-92
Polarity / Type
NPN
NPN
Application Category
Low-noise, high-frequency general purpose
General-purpose low-noise amplifier
VCE(max) – Collector-Emitter Voltage
~ 45 V
45 V
VBE(on) – Base-Emitter On Voltage
~ 0.65–0.75 V
~ 0.65–0.70 V
IC(max) – Max Collector Current
~ 100 mA
100 mA
hFE (DC Gain) Typical Range
~ 80 – 350 (varies with model)
200 – 450 (B grade class)
Noise Level
Generally low noise
Low noise (BC547 family is known for low noise)
Transition Frequency (fT)
~ 250–600 MHz (higher RF capability)
~ 100 MHz typical
Power Dissipation, PD
~ 300–400 mW
~ 500 mW
Collector-Emitter Saturation Voltage VCE(sat)
~ 90–200 mV (at IC ≈ 10mA)
~ 90–200 mV (similar)
Base-Emitter Saturation Voltage VBE(sat)
~ 0.8–1.0 V
~ 0.75–0.90 V
Typical Usage Areas
RF modules, small-signal RF amplifiers, audio preamps, low-noise stages
General switching, audio preamp, sensors, MCU interface
Strengths
Better high-frequency performance, good low-noise behavior
Widely available, stable gain, common in education and prototyping
Weaknesses
Slightly lower power dissipation, not as universally stocked as BC547B
Slower for RF use, lower fT than SS9014
Substitution Notes
Can replace 2N3904 in many cases, but check fT and biasing
Often replaceable by BC548/BC549 depending on voltage & noise needs

SS9014 Transistor Mechanical Drawing

SS9014 Transistor Mechanical Drawing

Manufacturer

Onsemi, a leading global semiconductor manufacturer, delivers SS9014 and similar small-signal NPN transistors with strong capabilities in high-volume, high-reliability production for consumer, industrial, and communication electronics. The company is known for its stringent process controls, low-noise device optimization, and consistent performance across temperature and voltage ranges. Onsemi supports advanced packaging, automated testing, and industry certifications including RoHS and REACH compliance.

Conclusion

Overall, the SS9014 NPN transistor offers a strong balance of low-noise amplification, reliable switching behavior, and high-frequency performance, making it a practical choice for designers working with audio preamplifiers, RF stages, and general-purpose signal conditioning circuits. Its clearly defined pinout, absolute maximum ratings, and electrical parameters simplify biasing and circuit design, while its availability in standard packages and compatibility with common substitutes like the BC547B and 2N3904 enhance design flexibility and supply security.


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