The SS9014 is a versatile small-signal NPN bipolar junction transistor widely used in low-level amplification, switching, and RF applications. This article will talk about the SS9014 transistor’s key features, specifications, typical characteristics, practical application circuits, and more.

The SS9014 is a small-signal NPN bipolar junction transistor designed for low-level amplification and switching applications. It typically operates with a collector-emitter voltage of around 45V and can handle up to 100mA of collector current, making it suitable for driving LEDs, sensors, and other low-power loads. Its transition frequency near 150MHz allows it to perform well in audio and radio-frequency circuits.
This transistor is commonly found in TO-92 and SOT-23 packages, offering flexibility for both through-hole and surface-mount designs. With a power dissipation rating typically between 200mW and 450mW, it performs best in circuits where heat is well-managed. The SS9014 is frequently used in audio pre-amplifiers, signal processing, and general-purpose switching circuits due to its stable gain characteristics and low noise performance.
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| Model | Type | VCEO Max | IC Max |
| KSP06 | NPN | 80V | 500mA |
| KSP42 | NPN | 300V | 500mA |
| MPSA42 | NPN | 300V | 500mA |
| MPSW06 | NPN | 80V | 1A |
| BC549 | NPN | 30V | 100mA |
| BC636 | NPN | 80V | 1A |
| BC639 | NPN | 80V | 1A |
| BC547 | NPN | 45V | 100mA |
| 2N2369 | NPN | 15V | 200mA |
| 2N3055 | NPN | 60V | 15A |
| 2N3904 | NPN | 40V | 200mA |
| 2N3906 | PNP | 40V | 200mA |
| 2SC5200 | NPN | 230V | 15A |
| 2N5551 | NPN | 160V | 600mA |

| Pin Number | Pin Name | Function |
| 1 | Emitter | Current flows out of the transistor; usually connected to ground in NPN circuits. |
| 2 | Base | Controls the transistor switching; a small current applied here regulates a larger current between collector and emitter. |
| 3 | Collector | Main current input; connected to the load in most switching or amplification circuits. |
| Symbol | Parameter | Rating | Units |
| VCBO | Collector-Base Voltage | 50 | V |
| VCEO | Collector-Emitter Voltage | 45 | V |
| VEBO | Emitter-Base Voltage | 5 | V |
| Ic | Collector Current | 100 | mA |
| Pc | Collector Power Dissipation | 450 | mW |
| Tj | Junction Temperature | 150 | °C |
| TSTG | Storage Temperature | −55 to +150 | °C |
| Parameter | Test Condition | Values (Min / Typ / Max) | Units |
| Collector-Base Breakdown Voltage (BVCBO) | IC = 100µA, IE = 0 | Min: 50 | V |
| Collector-Emitter Breakdown Voltage (BVCEO) | IC = 1mA, IB = 0 | Min: 45 | V |
| Emitter-Base Breakdown Voltage (BVEBO) | IE = 100µA, IC = 0 | Min: 5 | V |
| Collector Cut-off Current (ICBO) | VCB = 50V, IE = 0 | Max: 50 | nA |
| Emitter Cut-off Current (IEBO) | VEB = 5V, IC = 0 | Max: 50 | nA |
| DC Current Gain (hFE) | VCE = 5V, IC = 1mA | Min: 60 / Typ: 280 / Max: 1000 | — |
| VCE(sat) | IC = 100mA, IB = 5mA | Typ: 0.14 / Max: 0.30 | V |
| VBE(sat) | IC = 100mA, IB = 5mA | Typ: 0.84 / Max: 1.0 | V |
| VBE(on) | VCE = 5V, IC = 2mA | Min: 0.58 / Typ: 0.63 / Max: 0.70 | V |
| Output Capacitance (Cob) | VCB = 10V, f = 1MHz | Typ: 2.2 / Max: 3.5 | pF |
| Current Gain Bandwidth (fT) | VCE = 5V, IC = 10mA | Min: 150 / Typ: 270 | MHz |
| Noise Figure (NF) | VCE = 5V, IC = 0.2mA, f = 1kHz, RS = 2kΩ | Min: 0.9 / Max: 10 | dB |
Small-signal NPN bipolar junction transistor (BJT)
Suitable for low-noise amplification and switching applications
Collector-Emitter Voltage (VCEO): 45V maximum
Collector Current (Ic): 100mA maximum
High DC Current Gain (hFE): up to 1000 depending on classification
Low output capacitance for improved high-frequency performance
High transition frequency (fT): up to 270MHz
Low collector and emitter cutoff currents for efficient signal control
Available in TO-92 package (commonly used in through-hole designs)

A typical SS9014 pre amplifier configuration includes four biasing resistors and two coupling capacitors arranged to ensure smooth AC signal flow and stable transistor operation. The input signal passes through capacitor C1 and enters the base of Q1, the SS9014 transistor. The collector connects to VCC through resistor R1, while the amplified output is coupled through capacitor C2. The emitter connects to ground through resistor R2. Meanwhile, resistors R3 and R4 form a voltage divider that provides the correct base bias, allowing the transistor to operate in its active region and reduce distortion.
To calculate resistor values, begin by selecting the desired collector current IC. Then determine the base current by dividing IC by the transistor’s current gain hFE. Using these values, choose appropriate resistor values for stable operation. A sample calculation approach is Ib = Ic / hFE, followed by determining bias resistor values to maintain consistent operating conditions. Proper biasing ensures clean amplification and prevents shifts that lead to clipping or noise.
The SS9014 offers several benefits in audio amplification, including low noise performance for clearer sound reproduction, high gain for strong signal lifting, and reliable function in low-voltage electronic designs. Its availability and affordability make it a preferred choice for both learning applications and professional audio circuitry.

Figure 1. Static Characteristic
This graph shows the relationship between the collector current (IC) and the collector-emitter voltage (VCE) for different base currents (IB). Each curve represents a constant base current value. As VCE increases, IC rises quickly at first and then levels out, indicating the transistor is entering the active region. Higher base current results in proportionally higher collector current, demonstrating the transistor’s current amplification behavior. The flatter part of each curve reflects that once in the active region, the collector current becomes largely independent of VCE.
Figure 2. DC Current Gain (hFE)
This diagram shows how the DC current gain varies with collector current at VCE = 5V. At low collector current, hFE increases and then stays relatively stable across a broad current range, indicating efficient amplification. As the collector current approaches higher values, the gain begins to decrease, meaning the transistor becomes less effective at amplifying current when heavily loaded.

Figure 3. Base-Emitter and Collector-Emitter Saturation Voltage
This figure illustrates how the saturation voltages VBE(sat) and VCE(sat) change with increasing collector current. Saturation occurs when the transistor is fully ON, and further increase in base drive cannot increase collector current significantly. VCE(sat) typically remains low, indicating a small voltage drop in saturation, which makes the transistor useful as a switching device. VBE(sat) increases slowly with current, showing the base-emitter junction requires a higher forward bias at larger currents.
Figure 4. Current Gain Bandwidth Product (fT)
This plot shows the transition frequency fT versus collector current, again at VCE = 5V. The value of fT represents the frequency at which the transistor’s current gain reduces to 1. As collector current increases, fT rises to a peak, indicating the transistor achieves its best high-frequency performance around that operating current. After exceeding the optimal current region, fT declines, showing a loss of high-frequency amplification capability.
Signal Amplification - The SS9014 can amplify weak audio, sensor, or RF signals in pre-amplifier and low-noise amplifier stages of radios, intercoms, and small audio devices. Its relatively high gain and low noise help maintain signal quality.
General-Purpose Switching - It is often used as a low-power switch controlled by a microcontroller, logic gate, or sensor. The transistor can drive relays, LEDs, or small motors by allowing a low base current to control a higher load current.
Oscillator and Timing Circuits - Because of its good frequency response, the SS9014 works well in oscillators, waveform generators, timers, and clock circuits used in communication and control systems.
Voltage Regulation and Level Shifting - The SS9014 can be found in simple voltage regulators, feedback circuits, and level-shifting stages where signals must transition between logic levels or reference voltages.
RF and Communication Circuits - With a transition frequency (fT) reaching into the hundreds of MHz range, it can be used in low-power RF amplifiers, IF stages, and receiver front-ends in wireless modules.
| Feature | SS9014 | BC547B |
| Package Type | TO-92 | TO-92 |
| Polarity / Type | NPN | NPN |
| Application Category | Low-noise, high-frequency general purpose | General-purpose low-noise amplifier |
| VCE(max) – Collector-Emitter Voltage | ~ 45 V | 45 V |
| VBE(on) – Base-Emitter On Voltage | ~ 0.65–0.75 V | ~ 0.65–0.70 V |
| IC(max) – Max Collector Current | ~ 100 mA | 100 mA |
| hFE (DC Gain) Typical Range | ~ 80 – 350 (varies with model) | 200 – 450 (B grade class) |
| Noise Level | Generally low noise | Low noise (BC547 family is known for low noise) |
| Transition Frequency (fT) | ~ 250–600 MHz (higher RF capability) | ~ 100 MHz typical |
| Power Dissipation, PD | ~ 300–400 mW | ~ 500 mW |
| Collector-Emitter Saturation Voltage VCE(sat) | ~ 90–200 mV (at IC ≈ 10mA) | ~ 90–200 mV (similar) |
| Base-Emitter Saturation Voltage VBE(sat) | ~ 0.8–1.0 V | ~ 0.75–0.90 V |
| Typical Usage Areas | RF modules, small-signal RF amplifiers, audio preamps, low-noise stages | General switching, audio preamp, sensors, MCU interface |
| Strengths | Better high-frequency performance, good low-noise behavior | Widely available, stable gain, common in education and prototyping |
| Weaknesses | Slightly lower power dissipation, not as universally stocked as BC547B | Slower for RF use, lower fT than SS9014 |
| Substitution Notes | Can replace 2N3904 in many cases, but check fT and biasing | Often replaceable by BC548/BC549 depending on voltage & noise needs |

Onsemi, a leading global semiconductor manufacturer, delivers SS9014 and similar small-signal NPN transistors with strong capabilities in high-volume, high-reliability production for consumer, industrial, and communication electronics. The company is known for its stringent process controls, low-noise device optimization, and consistent performance across temperature and voltage ranges. Onsemi supports advanced packaging, automated testing, and industry certifications including RoHS and REACH compliance.
Overall, the SS9014 NPN transistor offers a strong balance of low-noise amplification, reliable switching behavior, and high-frequency performance, making it a practical choice for designers working with audio preamplifiers, RF stages, and general-purpose signal conditioning circuits. Its clearly defined pinout, absolute maximum ratings, and electrical parameters simplify biasing and circuit design, while its availability in standard packages and compatibility with common substitutes like the BC547B and 2N3904 enhance design flexibility and supply security.