Multi-gate FET system has undergone tremendous advancements over the last decade and the biggest challenge for this system has been doping thin-body silicon. Ion implantation is a crucial enabler for multi-gate devices in the production of power semiconductor devices. When ion implantation was modeled into Si FinFETs using atomistic simulation, dopant retention was dramatically reduced by backscattering for low energy & tilt angles and by the transmission for high angles which are both relative to the top surface.

Scientifically is not yet clear whether switching to non-Si materials would alter the issues related to energetic ions striking thin body semiconductors, whether via ion or plasma-assisted implant. Target sputtering, dose retention, and damage development will be impacted by variations in density, mass, average atomic mass, atomic spacing, surface binding energies, and lattice. The use of Binary Collision Approximation models and a physics-based simulation approach is a crucial part. This study is thoroughly focused on examining how to target physical characteristics affect dose retention and target damage.

Modelling Set-ups using SRIM software:

The Stopping and Range Matter (SRIM) is modeling software that offers a technique to investigate the physics and ion implantation process. To properly understand and assess the harm produced by energetic ions, the Lattice Binding Energy (LBE), the Displacement Energy (DE), and the Surface Binding Energy (SBE) of the components were constantly monitored throughout the experiment.