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Samsung world's first all-gate field effect transistor

FREE-SKY (HK) ELECTRONICS CO.,LIMITED / 08-06 16:39

Apparently, now Samsung wants to overtake TSMC by mass production of more advanced process processes, this you think will work?

                        

According to Korean media reports, Samsung will announce the start of volume manufacturing in the coming days, beating rival TSMC in the production of the world's most advanced chips.


This comes after the South Korean tech giant had so many yield problems moving to smaller process nodes that it affected the business of some of its biggest customers, such as Qualcomm, which is now considering TSMC for its future mobile chips.


NVIDIA is choosing TSMC for its next generation products after dealing with yield issues and relatively low energy efficiency for its Ampere GPUs, which were originally built on Samsung's 8nm process node.


Reports from local media in South Korea indicate that Samsung is preparing to announce the start of 3nm volume manufacturing, possibly as soon as this week. This would be a major challenge to rival TSMC, and would mean that the Korean company would be the first to use all-gate field-effect transistors (GAAFETs).


Samsung calls its implementation of the 3nm GAAFET transistor a multi-bridge channel field-effect transistor, but that's just one technical name for the transistor; it's the advantages behind it that are key: 50 percent less power, 45 percent less space taken up, and the ability to operate more stably at very low voltages.


There are rumors that Samsung has also secured the first customers for the new process node, and it will be interesting to see if the company can avoid repeating the mistakes of 8nm and 4nm. In any case, the foundry business is a strong contributor to Samsung's bottom line, with more than half of its operating profit - about $6.7 billion and change - coming from its chip division.



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