Infineon's CoolSiC™ products have been selected by Delta Electronics, a leading global provider of power management and thermal solutions headquartered in Taiwan, enabling Delta to take a major step toward its goal of energy transition and carbon neutrality using green power. Delta has successfully developed a bi-directional inverter, a three-in-one hybrid system consisting of solar power, energy storage and electric vehicle (EV) charging, which is capable of using EVs as emergency backup power for homes. 

This bi-directional inverter can be used to charge electric vehicles (EVs) and home batteries, as well as serve as a backup power source in the event of an unexpected power outage and as a core component of an efficient green energy generation facility. The bi-directional inverter features Infineon's 1200 V M1H CoolSiC™EasyPACK™ 1B module and a 1200 V CoolSiC™ MOSFET (a surface mount device) in a D²PAK 7-pin package. It achieves a major milestone by integrating three applications in a compact package measuring only 425 x 865 x 160 mm3 for a three in one system design. The system has an output power of approximately 10 kW, allows a maximum continuous current of 34 A to pass, and can exceed 97.5% peak efficiency. 

Infineon has been leading the development of power semiconductors for many years and is a trusted partner dedicated to further improving power management efficiency," said Lei-Ming Li, head of Delta's PV inverter business unit. With Infineon's power semiconductor devices, we were able to integrate three applications into one system, a big step towards our goal of green energy development." 

Dr. Peter Wawer, President of Infineon Technologies' Industrial Power Control Business Unit, said, "This project is an important milestone on the road to carbon neutrality, and we are proud to be a key participant in the project. We look forward to a long term cooperation between Delta and Infineon. We are proud that Infineon's power semiconductor devices are playing an important role in this smart energy solution." 

The key components used to create this 3-in-1 system include the 1200 V M1H CoolSiC™EasyPACK™ 1B module (F4-23MR12W1M1_B11) with NTC temperature sensor and a crimped process. This module offers ultra-high design flexibility and high current density. Also, the module uses leading-edge packaging technology with CoolSiC™ MOSFETs to achieve a low inductance design and extremely low switching and conduction losses. It supports customers with high switching frequency operation and allows for smaller system designs. easyPACK™ modules can help customers reduce new product development time and overall cost. 

The system also features several other semiconductor devices from Infineon, including those with CoolMOS™ C7 and TRENCHSTOP™ 5 IGBT technologies, as well as a 1200V CoolSiC™ MOSFET (IMBG120R350M1H) in a D²PAK 7-pin surface mount package. The latter features .XT interconnect technology, superior thermal performance compared to competitive products, and a Kelvin source concept. With their advantages, these MOSFETs ensure extremely low switching losses and improved system efficiency. 

These semiconductor devices have a 3 µs short-circuit capability and the MOSFETs provide full voltage-swing rate (dV/dt) control as well as a 4.5 V reference gate threshold voltage (VGS(th)). They also have strong resistance to parasitic conduction and can operate at 0 V shutdown voltage. In addition, these MOSFETs contain powerful body diodes that support hard commutation. The package has a creepage distance and electrical clearance of 6.1 mm. Thanks to the SMD package, these MOSFETs can be integrated directly onto a PCB with natural convection cooling, so no additional heat sink is required.