Veeco, a U.S. MOCVD equipment manufacturer, announced that Taiwan Semiconductor Research Institute (TSRI, Narlabs) in China has selected Veeco's Propel® R&D Metal Organic Chemical Vapor Deposition (MOCVD) equipment for gallium nitride (GaN)-based power and RF device related cutting-edge development and collaboration.

Designed for power semiconductor and RF applications, Veeco's Propel® GaN MOCVD system is configured with a single wafer reactor platform capable of depositing high-quality GaN films for the production of high-efficiency power devices and RF devices, according to officials.

The single wafer reactor is based on Veeco's Turbo Disc® technology, including Iso Flange™ and Symm Heat™ breakthrough technologies that help achieve homogeneous laminar flow and consistent temperature profiles across the wafer, and it is ideal for high volume production and 300mm functionality as well as R&D applications.

Veeco said the Propel® R&D MOCVD equipment, already installed at TSRI's Hsinchu lab, enables joint collaboration to drive technology innovation and the ability to develop and demonstrate technology for the emerging GaN market. This joint effort and collaboration will accelerate high-volume, low-cost adoption of third-generation semiconductor technologies on 200 and 300mm substrates.