The IR2153 is a high-voltage half-bridge gate driver IC with a built-in oscillator designed for controlling MOSFETs in switching power applications. Unlike many gate driver ICs that require an external PWM controller, the IR2153 can generate its own switching signals using only a timing resistor and capacitor, making circuit design simpler and reducing component count. It is capable of driving both high-side and low-side N-channel MOSFETs while providing important features such as fixed dead time, undervoltage protection, bootstrap high-side driving, and noise immunity.


| Pin No. | Pin Name | Function |
| 1 | VCC | Positive supply voltage input for the IC. It powers the internal oscillator, logic circuitry, and gate drivers. Typically connected to a DC supply within the recommended operating range. |
| 2 | RT | Timing resistor pin. An external resistor connected to RT works with the CT capacitor to set the oscillator frequency. |
| 3 | CT | Timing capacitor pin. An external capacitor connected to CT determines the oscillator frequency together with the RT resistor. |
| 4 | COM | Common ground reference for the IC. This pin serves as the return path for the low-side driver and internal control circuitry. |
| 5 | LO | Low-side gate driver output. It drives the gate of the low-side MOSFET referenced to COM. |
| 6 | VS | High-side floating supply return. Connected to the source of the high-side MOSFET and serves as the reference point for the high-side driver. |
| 7 | HO | High-side gate driver output. It drives the gate of the high-side MOSFET using the floating high-side supply. |
| 8 | VB | High-side floating supply voltage. Connected to the bootstrap circuit and provides power for the high-side driver section. |
• Integrated 600 V Half-Bridge Gate Driver - Supports high-voltage half-bridge applications and can drive both high-side and low-side N-channel MOSFETs.
• Built-In Oscillator - Requires only an external resistor (RT) and capacitor (CT) to generate the switching frequency, reducing component count.
• 15.6 V VCC Zener Clamp - Includes an internal zener clamp that helps protect the IC from excessive supply voltage.
• Micropower Startup Circuit - Consumes very little current during startup, improving efficiency and simplifying power supply design.
• Fixed Dead-Time Control - Provides a typical dead time of 1.2 μs to prevent simultaneous conduction of the power MOSFETs.
• Shutdown Function - Allows the oscillator and driver outputs to be disabled through the CT pin for protection or control purposes.
• Undervoltage Lockout (UVLO) - Monitors the supply voltage and disables the outputs when the voltage is too low for safe operation.
• Low dV/dt Gate Driver Design - Improves noise immunity and helps prevent false triggering in high-voltage switching environments.
• Bootstrap High-Side Driver - Uses a bootstrap capacitor to power the floating high-side gate driver without requiring an isolated supply.
• ESD Protection - Provides electrostatic discharge protection on all pins to improve device reliability during handling and assembly.
| Parameter | Value |
| High-Side Offset Voltage | Up to 600 V |
| High-Side Floating Supply Voltage (VB) | Up to 625 V |
| Supply Voltage (VCC) | 10 V to 15.6 V (clamped) |
| Duty Cycle | 50% |
| Dead Time (Typical) | 1.2 μs |
| Rise Time (Tr) | 80 ns |
| Fall Time (Tf) | 40 ns |
| VCC Clamp Voltage | 15.6 V |
| Supply Current (Typical) | 5 mA |
| RT Pin Current | ±5 mA Max |
| Allowable dVS/dt | ±50 V/ns |
| Junction Temperature Range | -40°C to +125°C |
| Storage Temperature Range | -55°C to +150°C |
| Maximum Junction Temperature | 150°C |
| Package Options | 8-Pin PDIP, 8-Pin SOIC |