What is 2N2219 NPN Transistor? This article will discuss the 2N2219 transistor’s fundamentals, specifications, features, working principles, applications, safe operation practices, comparisons, and more.

The 2N2219 NPN transistor from Microsemi is a reliable silicon bipolar junction transistor. Housed in a durable TO-39 metal can, it offers good thermal performance and stable operation, making it suitable for both industrial and commercial electronics. The 2N2219 is commonly used in signal amplification, driver stages, and moderate-current switching tasks.
With a collector current rating of up to 800 mA and a collector-emitter voltage of around 30 V (higher for A-variants), the 2N2219 balances performance and robustness. Its ability to operate at relatively high frequencies also allows use in low-power RF and fast-switching circuits.
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| Pin Number | Pin Name | Description |
| 1 | Emitter (E) | The emitter releases charge carriers. It is usually connected to ground in NPN circuits. |
| 2 | Base (B) | The control terminal. A small current at the base allows a larger current to flow from collector to emitter. |
| 3 | Collector (C) | The collector carries the main current through the transistor and is connected to the load. |
• 2N2219A
• 2N2218
• 2N2218A
•2N2219AL
• 2N2222
• 2N2222A
• 2N3904
• BC547
• BC548
• BC549
• PN2222
• PN2222A
• MPS2222A
• NTE123
• 2SC1815
•2SC945
| Parameter | Symbol | Value |
| Polarity | — | NPN |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 30 V (50 V for A version) |
| Collector-Base Breakdown Voltage | V(BR)CBO | 60 V (75 V for A version) |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 V (6 V for A version) |
| Continuous Collector Current | IC | 0.8 A |
| Power Dissipation (TA=25 °C) | PD | ~0.8 W |
| DC Current Gain (hFE) | hFE | ~50–100 (varies with IC) |
| Transition Frequency | fT | ~250 MHz |
| Collector-Emitter Saturation Voltage | VCE(sat) | ~0.3–1.0 V |
| Base-Emitter Saturation Voltage | VBE(sat) | ~0.6–2.0 V |
| Input Capacitance | Cibo | ~25 pF |
| Output Capacitance | Cobo | ~8 pF |
| Turn-On Time | ton | ~35-40 ns |
| Turn-Off Time | toff | ~250-300 ns |
• NPN Bipolar Junction Transistor (BJT) - The 2N2219 is an NPN-type transistor that uses a small base current to control a larger collector-emitter current, making it suitable for both signal amplification and electronic switching applications.
• High Collector Current Capability - This transistor can handle relatively high collector currents, allowing it to drive loads such as relays, small motors, and power-hungry circuit stages compared to standard small-signal transistors.
• Good Power Dissipation - With its metal package design, the 2N2219 is able to dissipate more heat efficiently, helping maintain stable operation under higher power and temperature conditions.
• Wide Frequency Response - The 2N2219 supports high-frequency operation, which makes it suitable for fast switching circuits, RF amplifiers, and communication-related applications.
• Stable DC Current Gain (hFE) - It provides consistent current gain over a wide operating range, ensuring predictable and reliable amplification performance in analog circuits.
• Low Saturation Voltage - When used as a switch, the transistor exhibits low collector-emitter saturation voltage, which reduces power loss and improves circuit efficiency.
• Rugged and Reliable Design - Built for durability, the 2N2219 can tolerate electrical and thermal stress, making it reliable for long-term use in industrial and commercial electronics.

In the first circuit, the 2N2219 operates mainly as a series pass transistor that controls voltage and current delivered to the load. The transistor is placed between the +12 V supply and the output path, allowing it to regulate power based on the bias applied to its base. The surrounding resistors, Zener diodes (1N752), and the rectifier diode (1N4001) form a feedback and protection network. The Zener diodes clamp the base voltage to a fixed reference, ensuring the transistor only conducts when the input voltage exceeds a certain threshold. As a result, the 2N2219 adjusts its conduction to stabilize the output and protect downstream components from overvoltage or reverse conditions. In this application, the transistor acts as a controlled switch and regulator rather than a simple amplifier.

In the second circuit, the 2N2219 is used as a high-frequency amplifier within an RF transmitter-style design. Here, the transistor amplifies a small audio or signal input (from the microphone and BC547 preamplifier stage) into a higher-frequency oscillating signal. The tuned components-inductors (L1), variable trimmer capacitor (TR), and small-value capacitors-set the operating frequency, while the 2N2219 provides the necessary gain and drive capability to feed the antenna. The transistor’s fast switching speed and high transition frequency make it suitable for RF work. In this configuration, the base receives a modulated signal, the collector handles the RF output, and the emitter provides stability through biasing and feedback components. The 2N2219 essentially converts low-level signals into a usable radio-frequency output.

In the third circuit, the 2N2219 functions as a basic linear voltage regulator or voltage dropper. A higher input voltage (around 15 V) is applied to the collector, while the base voltage is set using a resistor divider (10 kΩ and 6.8 kΩ). This fixed base bias determines how much the transistor conducts, causing the emitter to follow the base voltage minus the base–emitter drop. The output taken from the emitter is therefore reduced to approximately 5 V. The load resistor at the output represents the powered circuit. In this application, the 2N2219 works in its active region, continuously controlling current flow to maintain a lower, relatively stable output voltage. This demonstrates the transistor’s usefulness as a simple and inexpensive voltage regulation solution.