The 2N6107 Silicon PNP transistor from NTE with ratings such as 70 V VCEO, 7 A continuous collector current, and roughly 40 W dissipation, it sits well in audio output. This article will discuss the 2N6107’s specs, pin configuration, applications, pros/cons, and comparison to similar PNP devices.

The 2N6107 Silicon PNP Transistor from NTE is a robust medium-power BJT designed for reliable operation in amplification and switching applications. Built with a TO-220 package, it offers solid thermal performance while handling collector currents up to 7A and power dissipation around 40W. Its voltage ratings - 70V VCEO and 80V VCBO - make it suitable for moderate-voltage power stages, motor drivers, relay drivers, and audio amplifier output sections.
As a PNP device, the 2N6107 conducts when the base is driven lower than the emitter, allowing current to flow from emitter to collector. With an hFE range of roughly 30–150 and a transition frequency near 10 MHz, it delivers stable gain and dependable performance across various industrial circuit designs. Its durability and temperature tolerance further enhance its appeal for power electronics.
If you are interested in purchasing the 2N6107 Silicon PNP Transistor, feel free to contact us for pricing and availability.

| Pin Number | Pin Name | Description / Function |
| 1 | Base (B) | Controls the transistor’s operation; a small current here allows a larger current to flow from emitter to collector. |
| 2 | Collector (C) | The main current flows out through this pin when the transistor is turned ON. |
| 3 | Emitter (E) | Current flows out of the emitter toward the collector; must be more positive than the base for a PNP to conduct. |
• 2N6109
• 2N6111
•2N6491
• BD710
• BD712
• MJE2955T
• MJ2955
•BD908
• BD912
• TIP30C
• TIP42C
| Specification | Value |
| Collector-Emitter Voltage (VCEO) | 70 V |
| Collector-Base Voltage (VCBO) | 80 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Continuous Collector Current (IC) | 7 A |
| Peak Collector Current (ICM) | 10 A |
| Power Dissipation (PD) | 40 W |
| DC Current Gain (hFE) | 30 – 150 |
| Gain Test Current | 4 A |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.0 V max |
| Base-Emitter Saturation Voltage (VBE(sat)) | 2.5 V max |
| Transition Frequency (fT) | 10 MHz |
| Thermal Resistance (RθJC) | 3.12 °C/W |
| Operating Junction Temperature (TJ) | −65 to +150 °C |
| Storage Temperature (TSTG) | −65 to +150 °C |
| Package | TO-220 |
| Pin Configuration | 1-Base, 2-Collector, 3-Emitter |

• PNP silicon power transistor
• Medium-power switching and amplification capability
• High collector current rating up to 7A
• Collector-emitter voltage rating of 70V
• Low saturation voltages for efficient switching
• Wide current gain range (hFE 30–150)
• High power dissipation capability (40W)
• TO-220 package for efficient heat dissipation
• Reliable operation over a wide temperature range (−65°C to +150°C)

In this audio amplifier circuit, the 2N6107 operates as the upper PNP power output device responsible for delivering current to the speaker. The UA741 op-amp provides the amplified audio signal, driving the intermediate transistors (BC178 and AC108), which in turn control the base current of the 2N6107. When the audio waveform swings in the positive direction, the 2N6107 is driven into conduction, allowing current to flow from the +12V supply through the transistor and into the load. This provides the higher-power portion of the audio signal needed to drive the 4-ohm speaker. As a PNP device, the 2N6107 turns on when its base is pulled lower than its emitter, so the driver stage ensures proper biasing to keep the output waveform clean and undistorted. This configuration allows the transistor to handle significant current while keeping the op-amp safely isolated from the high-power portion of the circuit.

2N6107 as a Simple High-Side Switch
In the second diagram, the 2N6107 is used as a high-side switch to control an LED load from a 9V battery source. Because it is a PNP transistor, its emitter is connected to the positive supply and it turns on when the base is pulled downward through the resistor. When the switch (SW1 or SW2) is closed, the base is brought closer to ground potential through the 1k resistor, forward-biasing the base-emitter junction. This causes the 2N6107 to conduct, allowing current to flow from the emitter to the collector and powering the LED. When the switch is open, the base returns to a higher potential, turning the transistor off and cutting power to the LED. This demonstrates how the 2N6107 can control loads on the positive rail, making it useful for battery-powered circuits, lamp drivers, and simple DC switching applications.
• Audio power amplifiers (output stage transistor)
• Medium-power audio driver circuits
• High-side switching for DC loads
• Relay and solenoid drivers
• Motor control circuits for small DC motors
• LED and lamp drivers on the positive rail
• General-purpose power switching up to 7A
• Inverter and converter stages (low to medium power)
• Battery-powered control circuits
• Regulated power supply circuits (pass transistor)
• Analog signal amplification in moderate-power sections
• Complementary use with NPN power transistors in push-pull stages
• Industrial control circuits requiring reliable PNP switching
• Educational and experimental transistor power circuit designs
| Specification | 2N6107 | MJE2955T |
| Transistor Type | PNP | PNP |
| Package | TO-220 | TO-220 |
| Collector-Emitter Voltage (VCEO) | 70 V | 60 V |
| Collector-Base Voltage (VCBO) | 80 V | 70 V |
| Emitter-Base Voltage (VEBO) | 5 V | 5 V |
| Continuous Collector Current (IC) | 7 A | 10 A |
| Peak Collector Current | 10 A | 15 A |
| Power Dissipation (PD) | 40 W | 75 W |
| DC Current Gain (hFE) | 30 – 150 | 20 – 70 |
| Transition Frequency (fT) | 10 MHz | 3 MHz |
| Operating Temperature | −65°C to +150°C | −65°C to +150°C |

• High collector current capability (up to 7A continuous)
• Moderate voltage rating suitable for many power circuits
• Fast switching speed with a 10 MHz transition frequency
• Wide current gain range for flexible design use
• Low saturation voltages improve efficiency
• TO-220 package provides good heat dissipation
• Suitable for audio outputs, motor drivers, and power switching
• Operates reliably over a wide temperature range
• Lower power dissipation compared to higher-grade PNP transistors
• Not ideal for very high-current applications above 7–10A
• hFE variation may require careful biasing in precision circuits
• Switching efficiency may drop at higher temperatures
• Not a drop-in replacement for many newer PNP power transistors
• Limited availability compared to modern alternatives
NTE Electronics, Inc. is a U.S.-based manufacturer and broad-line supplier of electronic components with strong capabilities in semiconductors, passive devices, interconnects, relays, switches, and power-related products. Known for supporting both current-production and hard-to-find or obsolete components, NTE provides reliable replacement semiconductors, including transistors, diodes, ICs, and more. The company emphasizes quality assurance, consistent product availability, and extensive technical support, making it a trusted source for industrial, commercial, and consumer electronics applications worldwide.