This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Feature
Verylowon-resistance
Verylowgatecharge
Highavalancheruggedness
Lowgatedrivepowerloss
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
