The SI9933CDY-T1-GE3 parts are Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R, manufactured by VISHAY SILICONIX are available for purchase at Jotrin Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The SI9933CDY-T1-GE3 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

The production status marked on Jotrin.com is for reference only. If you didn't find what you were looking for, you can get more valuable information by emails, such as the SI9933CDY-T1-GE3 Inventory quantity, preferential price, datasheet, and manufacturer. We are always happy to hear from you, so feel free to contact us.

The SI9933CDY-T1-E3 is MOSFET 2P-CH 20V 4A 8SOIC, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI9933CDY-E3, that offers Unit Weight features such as 0.006596 oz, Mounting Style is designed to work in SMD/SMT, as well as the 8-SOIC (0.154", 3.90mm Width) Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -50°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 2 Channel of Number of Channels, and Supplier Device Package is 8-SO, and the Configuration is Dual, and FET Type is 2 P-Channel (Dual), and the Power Max is 3.1W, and Transistor Type is 2 P-Channel, and the Drain to Source Voltage Vdss is 20V, and Input Capacitance Ciss Vds is 665pF @ 10V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 4A, and the Rds On Max Id Vgs is 58 mOhm @ 4.8A, 4.5V, and Vgs th Max Id is 1.4V @ 250μA, and the Gate Charge Qg Vgs is 26nC @ 10V, and Pd Power Dissipation is 2 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 50 C, and the Fall Time is 13 ns, and Rise Time is 50 ns, and the Vgs Gate Source Voltage is 12 V, and Id Continuous Drain Current is 4 A, and the Vds Drain Source Breakdown Voltage is - 20 V, and Rds On Drain Source Resistance is 58 mOhms, and the Transistor Polarity is P-Channel, and Typical Turn Off Delay Time is 29 ns, and the Typical Turn On Delay Time is 21 ns, and Channel Mode is Enhancement.

SI9933CDY with user guide manufactured by VISHAY. The SI9933CDY is available in SOP8 Package, is part of the FETs - Arrays.

SI9933CDY-T1 with circuit diagram manufactured by VISHAY. The SI9933CDY-T1 is available in SO-8 Package, is part of the FETs - Arrays.