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The GS1M is DIODE GEN PURP 1KV 1A DO214AC, that includes Tape & Reel (TR) Packaging, they are designed to operate with a DO-214AC, SMA Package Case, Mounting Type is shown on datasheet note for use in a Surface Mount, that offers Supplier Device Package features such as DO-214AC (HSMA), Speed is designed to work in Standard Recovery >500ns, > 200mA (Io), as well as the Standard Diode Type, the device can also be used as 10μA @ 1000V Current Reverse Leakage Vr. In addition, the Voltage Forward Vf Max If is 1.1V @ 1A, the device is offered in 1000V (1kV) Voltage DC Reverse Vr Max, the device has a 1A of Current Average Rectified Io, and Capacitance Vr F is 15pF @ 4V, 1MHz, it has an Operating Temperature Junction range of -55°C ~ 150°C.

GS1KW with user guide manufactured by PANJIT. The GS1KW is available in SMADO-2 Package, is part of the IC Chips.

GS1M R2 with circuit diagram manufactured by SEP. The GS1M R2 is available in SMA Package, is part of the IC Chips.

GS1M T/R with EDA / CAD Models manufactured by PANJIT. The GS1M T/R is available in SMA Package, is part of the IC Chips.