The SQJB60EP-T1_GE3 parts are TRANS MOSFET N-CH 60V 30A AUTOMOTIVE AEC-Q101 5-PIN(4+TAB) POWERPAK SO, manufactured by VISHAY SILICONIX are available for purchase at Jotrin Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The SQJB60EP-T1_GE3 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

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SQJ992EP-T1_GE3 with pin details, that includes Automotive, AEC-Q101, TrenchFETR Series, they are designed to operate with a Tape & Reel (TR) Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Tradename features such as TrenchFET, Package Case is designed to work in PowerPAKR SO-8 Dual, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 175°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a PowerPAKR SO-8 Dual of Supplier Device Package, and Configuration is Dual, and the FET Type is 2 N-Channel (Dual), and Power Max is 34W, and the Transistor Type is 2 N-Channel, and Drain to Source Voltage Vdss is 60V, and the Input Capacitance Ciss Vds is 446pF @ 30V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 15A, and Rds On Max Id Vgs is 56.2 mOhm @ 3.7A, 10V, and the Vgs th Max Id is 2.5V @ 250μA, and Gate Charge Qg Vgs is 12nC @ 10V, and the Pd Power Dissipation is 34 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 7 ns 7 ns, and the Rise Time is 6 ns 6 ns, and Vgs Gate Source Voltage is +/- 20 V +/- 20 V, and the Id Continuous Drain Current is 15 A 15 A, and Vds Drain Source Breakdown Voltage is 60 V 60 V, and the Vgs th Gate Source Threshold Voltage is 1.5 V 1.5 V, and Rds On Drain Source Resistance is 125.4 mOhms 125.4 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 12 ns 12 ns, and the Typical Turn On Delay Time is 6 ns 6 ns, and Qg Gate Charge is 8.1 nC 8.1 nC, and the Forward Transconductance Min is 11 S 11 S, and Channel Mode is Enhancement.

SQJ970EPT1-GE3 with user guide manufactured by VISAHY. The SQJ970EPT1-GE3 is available in SMD Package, is part of the IC Chips.

SQJ970EP-T1-GE3 with circuit diagram manufactured by VISHAY. The SQJ970EP-T1-GE3 is available in QFN8 Package, is part of the IC Chips.

SQJ980EP-T1-GE3 with EDA / CAD Models manufactured by VISHAY. The SQJ980EP-T1-GE3 is available in QFN8 Package, is part of the IC Chips.