IXTH1N200P3HV Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser andx-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid.Due to the positive temperature coefficient of their on-stateresistance, these high-voltage Power MOSFETs can be operatedin parallel, thereby eliminating the need for lower voltage,series-connected devices and enabling cost-effectivepower systems. Other benefits include component reductionin gate drive circuitry, simpler design, improved reliability,and PCB space saving.
Feature
Applications
Capacitor discharge circuits
High voltage power supplies
Pulse circuits
Laser and X-ray generation systems
High voltage relay disconnect circuits
CT and MRI scanners
Ultrasound machines
Advantages:
Easy to mount
Space savings
High power density
The IXTH1N200P3HV is an N-Channel Power MOSFET designed by Littelfuse. It features a high drain-source breakdown voltage of 2 kV and a continuous drain current of 1 A. With a drain-source resistance of 40 Ohms and a gate-source voltage range of - 20 V to + 20 V, it is suitable for a wide variety of power switching systems. Housed in a TO-247-3 Variant package, it offers benefits such as a positive temperature coefficient of on-state resistance, allowing for parallel operation, reduction in gate drive circuitry components, simpler design, improved reliability, and PCB space saving.
Benefits
Proprietory high-voltage packages
High blocking voltage of 2 kV
Positive temperature coefficient of RDS(ON), enabling parallel operation
Component reduction in gate drive circuitry
Simpler design
Improved reliability
PCB space saving
Easy to mount
High power density
Application Examples
Capacitor discharge circuits
High voltage power supplies
Pulse circuits
Laser and X-ray generation systems
High voltage relay disconnect circuits
CT and MRI scanners
Ultrasound machines
Compliance and Industry Certifications
The IXTH1N200P3HV has RoHS details (consult manufacturer for full information). It has a wide operating temperature range from - 55 °C to + 150 °C, and power dissipation of 125 W.
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
