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The SI3483CDV-T1-GE3 is MOSFET P-CH 30V 8A 6-TSOP, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI3483CDV-GE3, that offers Unit Weight features such as 0.000705 oz, Mounting Style is designed to work in SMD/SMT, as well as the SOT-23-6 Thin, TSOT-23-6 Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 1 Channel of Number of Channels, and Supplier Device Package is 6-TSOP, and the Configuration is Single, and FET Type is MOSFET P-Channel, Metal Oxide, and the Power Max is 4.2W, and Transistor Type is 1 P-Channel, and the Drain to Source Voltage Vdss is 30V, and Input Capacitance Ciss Vds is 1000pF @ 15V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 8A (Tc), and the Rds On Max Id Vgs is 34 mOhm @ 6.1A, 10V, and Vgs th Max Id is 3V @ 250μA, and the Gate Charge Qg Vgs is 33nC @ 10V, and Pd Power Dissipation is 2 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 15 ns 10 ns, and Rise Time is 135 ns 15 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 6.1 A, and the Vds Drain Source Breakdown Voltage is - 30 V, and Rds On Drain Source Resistance is 34 mOhms, and the Transistor Polarity is P-Channel, and Typical Turn Off Delay Time is 25 ns 30 ns, and the Typical Turn On Delay Time is 45 ns 10 ns, and Channel Mode is Enhancement.

The SI3483CDV-T1-E3 is MOSFET P-CH 30V 8A 6-TSOP, that includes 20 V Vgs Gate Source Voltage, they are designed to operate with a - 30 V Vds Drain Source Breakdown Voltage, Unit Weight is shown on datasheet note for use in a 0.000705 oz, that offers Typical Turn On Delay Time features such as 45 ns 10 ns, Typical Turn Off Delay Time is designed to work in 25 ns 30 ns, as well as the 1 P-Channel Transistor Type, the device can also be used as P-Channel Transistor Polarity. In addition, the Technology is Si, the device is offered in 135 ns 15 ns Rise Time, the device has a 34 mOhms of Rds On Drain Source Resistance, and Pd Power Dissipation is 2 W, and the Part Aliases is SI3483CDV-E3, and Packaging is Reel, and the Package Case is TSOP-6, and Number of Channels is 1 Channel, and the Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and Id Continuous Drain Current is 6.1 A, and the Fall Time is 15 ns 10 ns, and Configuration is Single, and the Channel Mode is Enhancement.

SI3483CDV with circuit diagram manufactured by VISHAY. The SI3483CDV is available in TSOP-6 Package, is part of the FETs - Single.

The SI3483DV-T1-E3 is MOSFET P-CH 30V 4.7A 6-TSOP manufactured by FAIRCHILD. The SI3483DV-T1-E3 is available in SOT-23-6 Thin, TSOT-23-6 Package, is part of the FETs - Single, , and with support for MOSFET P-CH 30V 4.7A 6-TSOP, P-Channel 30V 4.7A (Ta) 1.14W (Ta) Surface Mount 6-TSOP, Trans MOSFET P-CH 30V 4.7A 6-Pin TSOP T/R.