The SIS903DN-T1-GE3 parts are MOSFET -20V VDS 8V VGS POWERPAK 1212-8, manufactured by VISHAY SILICONIX are available for purchase at freesky Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The SIS903DN-T1-GE3 components of freesky Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

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The SIS892DN-T1-GE3 is MOSFET N-CH 100V 30A 1212-8 PPAK, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SIS892DN-GE3, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in PowerPAKR 1212-8, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a PowerPAKR 1212-8 of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 52W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 100V, and the Input Capacitance Ciss Vds is 611pF @ 50V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 30A (Tc), and Rds On Max Id Vgs is 29 mOhm @ 10A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 21.5nC @ 10V, and the Pd Power Dissipation is 52 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 30 A, and Vds Drain Source Breakdown Voltage is 100 V, and the Vgs th Gate Source Threshold Voltage is 3 V, and Rds On Drain Source Resistance is 29 mOhms, and the Transistor Polarity is N-Channel, and Qg Gate Charge is 14.2 nC, and the Forward Transconductance Min is 22 S.

The SIS902DN-T1-GE3 is MOSFET 2N-CH 75V 4A PPAK 1212-8, that includes 2.5V @ 250μA Vgs th Max Id, they are designed to operate with a PowerPAKR 1212-8 Dual Supplier Device Package, Series is shown on datasheet note for use in a TrenchFETR, that offers Rds On Max Id Vgs features such as 186 mOhm @ 3A, 10V, Power Max is designed to work in 15.4W, as well as the Digi-ReelR Packaging, the device can also be used as PowerPAKR 1212-8 Dual Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 175pF @ 38V of Input Capacitance Ciss Vds, and Gate Charge Qg Vgs is 6nC @ 10V, and the FET Type is 2 N-Channel (Dual), and FET Feature is Standard, and the Drain to Source Voltage Vdss is 75V, and Current Continuous Drain Id 25°C is 4A.

SIS894DN-T1-E3 with circuit diagram manufactured by VISHAY. The SIS894DN-T1-E3 is available in QFN8 Package, is part of the IC Chips.

SIS900 A2 CN with EDA / CAD Models manufactured by SIS. The SIS900 A2 CN is available in QFP-128 Package, is part of the IC Chips.