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The SIA432DJ-T1-GE3 is MOSFET N-CH 30V 12A SC70-6, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SIA432DJ-GE3, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in PowerPAKR SC-70-6, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a PowerPAKR SC-70-6 Single of Supplier Device Package, and Configuration is Single Quad Drain Dual Source, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 19.2W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 30V, and the Input Capacitance Ciss Vds is 800pF @ 15V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 12A (Tc), and Rds On Max Id Vgs is 20 mOhm @ 6A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 20nC @ 10V, and the Pd Power Dissipation is 3.5 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 10 ns, and the Rise Time is 11 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 10.1 A, and Vds Drain Source Breakdown Voltage is 30 V, and the Rds On Drain Source Resistance is 20 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 15 ns, and Typical Turn On Delay Time is 15 ns, and the Channel Mode is Enhancement.

The SIA433EDJ-T1-GE3 is MOSFET P-CH 20V 12A SC-70-6, that includes 1.2V @ 250μA Vgs th Max Id, they are designed to operate with a - 1.2 V Vgs th Gate Source Threshold Voltage, Vgs Gate Source Voltage is shown on datasheet note for use in a 12 V, that offers Vds Drain Source Breakdown Voltage features such as - 20 V, Typical Turn On Delay Time is designed to work in 0.71 us, as well as the 6 us Typical Turn Off Delay Time, the device can also be used as 1 P-Channel Transistor Type. In addition, the Transistor Polarity is P-Channel, the device is offered in Si Technology, the device has a PowerPAKR SC-70-6 Single of Supplier Device Package, and Series is TrenchFETR, and the Rise Time is 1.7 us, and Rds On Max Id Vgs is 18 mOhm @ 7.6A, 4.5V, and the Rds On Drain Source Resistance is 18 mOhms, and Qg Gate Charge is 50 nC, and the Power Max is 19W, and Pd Power Dissipation is 19 W, and the Part Aliases is SIA433EDJ-GE3, and Packaging is Digi-ReelR Alternate Packaging, and the Package Case is PowerPAKR SC-70-6, it has an Operating Temperature range of -55°C ~ 150°C (TJ), and the Number of Channels is 1 Channel, and Mounting Style is SMD/SMT, and the Mounting Type is Surface Mount, and Id Continuous Drain Current is - 12 A, and the Gate Charge Qg Vgs is 75nC @ 8V, and Forward Transconductance Min is 35 S, and the FET Type is MOSFET P-Channel, Metal Oxide, and FET Feature is Standard, and the Fall Time is 3.2 us, and Drain to Source Voltage Vdss is 20V, and the Current Continuous Drain Id 25°C is 12A (Tc), and Configuration is Single.

SIA433EDJ with circuit diagram manufactured by VISHAY. The SIA433EDJ is available in QFN Package, is part of the FETs - Single.