Features
•N-channel,normallevel
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•Verylowreverserecoverycharge(Qrr)
•150°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplication
•Idealforhigh-frequencyswitchingandsynchronousrectification
Feature
Lower R DS(on) without compromising FOM gd and FOM oss
Lower output charge
Ultra-low reverse recovery charge
Increased commutation ruggedness
Higher switching frequency possible
Reduced paralleling
Size reduction enabled with SuperSO8 best-in-class
Higher power density designs
More rugged products
System cost reduction
Improved EMI behavior
Applications
Low voltage drives
Telecom
Solar
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
