BSS123-7-F

Manufacturers：Diodes
QTy：150526
Partno：NEW
Packing：SOT23
Content：In stock

Specifications：

BSS123-7-F Product Details

N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology.
The BSS123-7-F is supplied in the SOT23 subminiature surface mounting package.

Applications:-
• Relay driver
• High-speed line driver
• Telephone ringer

Feature

• ’Trench’ technology
• Extremely fast switching
• Logic level compatible
• Subminiature surface mounting package

Technical Parameters

Transistor Polarity
N-Channel
Drain Source Breakdown Voltage
100 V
Gate Source Breakdown Voltage
+/- 20 V
Continuous Drain Current
170 mA
Resistance Drain Source RDS (on)
6 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Packaging
Reel
Fall Time
8 ns
Forward Transconductance gFS (Max / Min)
0.08 S
Minimum Operating Temperature
- 55 C
Power Dissipation
0.3 W
Rise Time
8 ns
Factory Pack Quantity
3000
Typical Turn Off Delay Time
13 ns

BSS123-7-F

BSS123-7-F Product Details

Feature

Technical Parameters

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