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SQJ960EP-T1_GE3 with pin details, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.017870 oz, that offers Mounting Style features such as SMD/SMT, Tradename is designed to work in TrenchFET, as well as the PowerPAKR SO-8 Dual Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 175°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a PowerPAKR SO-8 Dual of Supplier Device Package, and Configuration is Dual, and the FET Type is 2 N-Channel (Dual), and Power Max is 34W, and the Drain to Source Voltage Vdss is 60V, and Input Capacitance Ciss Vds is 735pF @ 25V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 8A, and the Rds On Max Id Vgs is 36 mOhm @ 5.3A, 10V, and Vgs th Max Id is 2.5V @ 250μA, and the Gate Charge Qg Vgs is 20nC @ 10V, and Pd Power Dissipation is 34 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 7 ns, and Rise Time is 8 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 8 A, and the Vds Drain Source Breakdown Voltage is 60 V, and Vgs th Gate Source Threshold Voltage is 2.5 V, and the Rds On Drain Source Resistance is 30 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 19 ns, and Typical Turn On Delay Time is 6 ns, and the Qg Gate Charge is 13 nC, and Forward Transconductance Min is 16 S.

The SQJ962EP-T1-GE3 is MOSFET 2N-CH 60V 8A 8SO, that includes 2.5V @ 250μA Vgs th Max Id, they are designed to operate with a PowerPAKR SO-8 Dual Supplier Device Package, Series is shown on datasheet note for use in a TrenchFETR, that offers Rds On Max Id Vgs features such as 60 mOhm @ 4.3A, 10V, Power Max is designed to work in 25W, as well as the Tape & Reel (TR) Packaging, the device can also be used as PowerPAKR SO-8 Dual Package Case, it has an Operating Temperature range of -55°C ~ 175°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 475pF @ 25V of Input Capacitance Ciss Vds, and Gate Charge Qg Vgs is 14nC @ 10V, and the FET Type is 2 N-Channel (Dual), and FET Feature is Logic Level Gate, and the Drain to Source Voltage Vdss is 60V, and Current Continuous Drain Id 25°C is 8A.

SQJ964EPT1-GE3 with circuit diagram manufactured by VISAHY. The SQJ964EPT1-GE3 is available in SMD Package, is part of the IC Chips.

The SQJ964EP-T1-GE3 is Trans MOSFET N-CH 60V 8A Automotive 5-Pin(4+Tab) PowerPAK SO T/R manufactured by VISHAY. The SQJ964EP-T1-GE3 is available in QFN8 Package, is part of the IC Chips, , and with support for Trans MOSFET N-CH 60V 8A Automotive 5-Pin(4+Tab) PowerPAK SO T/R.