These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary,high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.
These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
1. 0.17 A, 100 V. Rds(on) = 6W @ Vgs= 10 V, Rds(on) = 10W @ Vgs= 4.5 V
2. High density cell design for extremely lowRDS(ON)
3. Rugged and Reliable
4. Compact industry standard SOT-23 surface mount package
Absolute Maximum Ratings
1. Drain-Source Voltage : VDSS = 100 V
2. Gate-Source Voltage : VGSS = ±20 V
3. Maximum Power Dissipation : 0.36 W
Feature
0.17 A, 100 V RDS(ON) = 6 Ω @ VGS = 10 V RDS(ON) = 10 Ω @ VGS = 4.5 V
High Density Cell Design for Extremely Low RDS(ON)
Rugged and Reliable
Compact Industry Standard SOT-23 Surface Mount Package
Applications
This product is general usage and suitable for many different applications.
Small Servo Motor Control
powerPower MOSFET gate drivers
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
