The FDB86363-F085 parts are N-CHANNEL POWERTRENCH® MOSFET, 80V, 110A, 2.4MΩ, manufactured by ON are available for purchase at Jotrin Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The FDB86363-F085 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

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The FDB86360_F085 is MOSFET N-Channel Power Trench MOSFET, that includes Reel Packaging, they are designed to operate with a 0.046296 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-263-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 333 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 70 ns, and Rise Time is 197 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 110 A, and the Vds Drain Source Breakdown Voltage is 80 V, and Vgs th Gate Source Threshold Voltage is 3 V, and the Rds On Drain Source Resistance is 1.5 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 86 ns, and Typical Turn On Delay Time is 75 ns, and the Qg Gate Charge is 207 nC.

FDB86363_F085 with user guide, that includes 3 V Vgs th Gate Source Threshold Voltage, they are designed to operate with a 20 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 80 V, that offers Unit Weight features such as 0.046296 oz, Typical Turn On Delay Time is designed to work in 38 ns, as well as the 64 ns Typical Turn Off Delay Time, the device can also be used as 1 N-Channel Transistor Type. In addition, the Transistor Polarity is N-Channel, the device is offered in Si Technology, the device has a 129 ns of Rise Time, and Rds On Drain Source Resistance is 2 mOhms, and the Qg Gate Charge is 131 nC, and Pd Power Dissipation is 300 W, and the Packaging is Reel, and Package Case is TO-263-3, and the Number of Channels is 1 Channel, and Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 175 C, and the Id Continuous Drain Current is 110 A, and Fall Time is 40 ns, and the Configuration is Single.

FDB86360 with circuit diagram manufactured by FAIRCHILD. The FDB86360 is available in TO-263 Package, is part of the FETs - Single.

FDB86363 with EDA / CAD Models manufactured by FSC. The FDB86363 is available in TO-263 Package, is part of the FETs - Single.