The TLC272CDR is a dual precision Operational Amplifier combines a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise and speeds approaching those of general-purpose BiFET device. This device uses Texas Instruments silicon-gate LinCMOS™ technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes. The extremely high input impedance, low bias currents and high slew rates make this device ideal for applications previously reserved for BiFET and NFET products. These advantages, in combination with good common-mode rejection and supply voltage rejection, make this device a good choice for new state-of-the-art designs as well as for upgrading existing designs. In general, many features associated with bipolar technology are available on LinCMOS™ operational amplifiers without the power penalties of bipolar technology.
Feature
Input offset voltage drift- Typically 0.1µV/month, including the first 30 days
Common-mode input voltage range extends below the negative rail
Output voltage range includes negative rail
ESD-protection circuitry
Designed-in latch-up immunity
25nV/√Hz at f=1kHz Typically low noise
10¹² Typical high input impedance
1.8µV/°C Typical offset drift
75dB Typical CMRR
80dB CMRR
Green product and no Sb/Br
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
