The CY62177EV30LL-55ZXIT is a high performance CMOS static RAM organized as 2 M words by 16 bits and 4 M words by 8 bits[1]. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 99 percent when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: deselected (CE1HIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE1 LOW, CE2 HIGH and WE LOW).
Feature
■ Thin small outline package (TSOP) I configurable as 2 M × 16
or as 4 M x 8 static RAM (SRAM)
■ Very high speed
❐ 55 ns
■ Wide voltage range
❐ 2.2 V to 3.7 V
■ Ultra low standby power
❐ Typical standby current: 3 A
❐ Maximum standby current: 25 A
■ Ultra low active power
❐ Typical active current: 4.5 mA at f = 1 MHz
■ Easy memory expansion with CE1, CE2, and OE Features
■ Automatic power down when deselected
■ Complementary Metal Oxide Semiconductor (CMOS) for optimum speed and power
■ Available in Pb-free 48-ball TSOP I package
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
