This device is made using the SuperMESH Power MOSFET technology that is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.
Feature
Extremelyhighdv/dtcapability
100%avalanchetested
Gatechargeminimized
Verylowintrinsiccapacitance
Verygoodmanufacturingrepeatability
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
