Assembly bases:4.0 V
Assembly bases:950 mΩ
Assembly bases:2790 pF
Assembly bases:45 nC
Channel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
900 V
Package Type
SC-65
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
950 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
45 nC @ 10 V
Height
4.8mm
Transistor Material
Si
Length
15.9mm
Width
20mm
Maximum Operating Temperature
+150 °C
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