STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
RDS(on)*Qgindustrybenchmark
Extremelylowon-resistanceRDS(on)
Highavalancheruggedness
Lowgateinputresistance
Channel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
6.2mm
Length
6.6mm
Transistor Material
Si
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Series
STripFET
Height
2.4mm
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