The QS6J3 parts manufactured by ROHM are available for purchase at Freesky. Here you can find various types and values of electronic parts from the world's leading manufacturers. The QS6J3 components of Freesky are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

The production status marked on freesky558.com is for reference only. If you didn't find what you were looking for, you can get more valuable information by emails, such as the QS6J3 Inventory quantity, preferential price, datasheet, and manufacturer. We are always happy to hear from you, so feel free to contact us.

The QS6J11TR is MOSFET 2P-CH 12V 2A TSMT6, that includes QS6J11 Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as SC-74, SOT-457, Technology is designed to work in Si, it has an Operating Temperature range of 150°C (TJ), the device can also be used as Surface Mount Mounting Type. In addition, the Number of Channels is 2 Channel, the device is offered in TSMT6 Supplier Device Package, the device has a Dual of Configuration, and FET Type is 2 P-Channel (Dual), and the Power Max is 600mW, and Transistor Type is 2 P-Channel, and the Drain to Source Voltage Vdss is 12V, and Input Capacitance Ciss Vds is 770pF @ 6V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 2A, and the Rds On Max Id Vgs is 105 mOhm @ 2A, 4.5V, and Vgs th Max Id is 1V @ 1mA, and the Gate Charge Qg Vgs is 6.5nC @ 4.5V, and Pd Power Dissipation is 600 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 35 ns, and Rise Time is 17 ns, and the Vgs Gate Source Voltage is 10 V, and Id Continuous Drain Current is 2 A, and the Vds Drain Source Breakdown Voltage is - 12 V, and Rds On Drain Source Resistance is 75 mOhms, and the Transistor Polarity is P-Channel, and Typical Turn Off Delay Time is 65 ns, and the Typical Turn On Delay Time is 10 ns, and Qg Gate Charge is 6.5 nC, and the Forward Transconductance Min is 2 S, and Channel Mode is Enhancement.

The QS6J1TR is MOSFET 2P-CH 20V 1.5A TSMT6, that includes 2V @ 1mA Vgs th Max Id, they are designed to operate with a 12 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a - 20 V, that offers Typical Turn On Delay Time features such as 10 ns, Typical Turn Off Delay Time is designed to work in 45 ns, as well as the 2 P-Channel Transistor Type, the device can also be used as P-Channel Transistor Polarity. In addition, the Technology is Si, the device is offered in TSMT6 Supplier Device Package, the device has a QS6J1 of Series, and Rise Time is 12 ns, and the Rds On Max Id Vgs is 215 mOhm @ 1.5A, 4.5V, and Rds On Drain Source Resistance is 310 mOhms, and the Power Max is 1.25W, and Pd Power Dissipation is 1.25 W, and the Packaging is Digi-ReelR Alternate Packaging, and Package Case is SC-74, SOT-457, it has an Operating Temperature range of 150°C (TJ), and Number of Channels is 2 Channel, and the Mounting Style is SMD/SMT, and Mounting Type is Surface Mount, and the Input Capacitance Ciss Vds is 270pF @ 10V, and Id Continuous Drain Current is 1.5 A, and the Gate Charge Qg Vgs is 3nC @ 4.5V, and FET Type is 2 P-Channel (Dual), and the FET Feature is Logic Level Gate, and Fall Time is 12 ns, and the Drain to Source Voltage Vdss is 20V, and Current Continuous Drain Id 25°C is 1.5A, and the Configuration is Dual, and Channel Mode is Enhancement.

QS6J11 with circuit diagram manufactured by ROHM. The QS6J11 is available in SOT-163 Package, is part of the FETs - Arrays.