Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Feature
High density cell design for extremely low RDS(ON).
Voltage controlled small signal switch.
Rugged and Reliable.
High saturation current capability.
Applications
This product is general usage and suitable for many different applications.
Small Servo Motor Control
Power MOSFET Gate Drivers
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
