The DSEI2X101-12A is a dual isolated fast recovery Epitaxial Diode features planar passivated chips, improved thermal behaviour, very soft recovery behaviour, avalanche voltage rated for reliable operation and soft reverse recovery for low EMI/RFI.
Feature
Low leakage current
Short recovery time
1200V Maximum repetitive reverse blocking voltage
250W Total power dissipation
900A Maximum forward surge current
150A RMS current
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
