General Description
ThisP-Channel logic level enhancement mode field effect
ransistor isproduced using Fairchilds proprietary, high cell
ensity, DMOS technology. This very high density process is
specially tailored to minimize on-state resistance.This
evice has been designed especially for low voltage
pplications as a replacement for digital transistors. Since
ias resistors are not required, this one P-channel FET can
eplace several digital transistors with different bias resistors
uch asthe DTCx and DCDx series.

General Description
ThisP-Channel logic level enhancement mode field effect
ransistor isproduced using Fairchilds proprietary, high cell
ensity, DMOS technology. This very high density process is
specially tailored to minimize on-state resistance.This
evice has been designed especially for low voltage
pplications as a replacement for digital transistors. Since
ias resistors are not required, this one P-channel FET can
eplace several digital transistors with different bias resistors
uch asthe DTCx and DCDx series.