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The 2N7002K-T1-GE3 is MOSFET N-CH 60V 300MA SOT23-3, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a 2N7002K-GE3, that offers Unit Weight features such as 0.050717 oz, Mounting Style is designed to work in SMD/SMT, as well as the TO-236-3, SC-59, SOT-23-3 Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 1 Channel of Number of Channels, and Supplier Device Package is TO-236, and the Configuration is Single, and FET Type is MOSFET N-Channel, Metal Oxide, and the Power Max is 350mW, and Transistor Type is 1 N-Channel, and the Drain to Source Voltage Vdss is 60V, and Input Capacitance Ciss Vds is 30pF @ 25V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 300mA (Ta), and the Rds On Max Id Vgs is 2 Ohm @ 500mA, 10V, and Vgs th Max Id is 2.5V @ 250μA, and the Gate Charge Qg Vgs is 0.6nC @ 4.5V, and Pd Power Dissipation is 350 mW, it has an Maximum Operating Temperature range of + 125 C, it has an Minimum Operating Temperature range of - 55 C, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 300 mA, and the Vds Drain Source Breakdown Voltage is 60 V, and Rds On Drain Source Resistance is 2 Ohms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 35 ns, and the Typical Turn On Delay Time is 25 ns, and Qg Gate Charge is 0.4 nC, and the Forward Transconductance Min is 100 mS, and Channel Mode is Enhancement.

The 2N7002KT1G is MOSFET N-CH 60V 320MA SOT-23, that includes 2.5V @ 250μA Vgs th Max Id, they are designed to operate with a 20 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 60 V, that offers Unit Weight features such as 0.050717 oz, Typical Turn On Delay Time is designed to work in 12.2 ns, as well as the 55.8 ns Typical Turn Off Delay Time, the device can also be used as 1 N-Channel Transistor Type. In addition, the Transistor Polarity is N-Channel, the device is offered in Si Technology, the device has a SOT-23-3 (TO-236) of Supplier Device Package, and Series is 2N7002K, and the Rise Time is 9 ns, and Rds On Max Id Vgs is 1.6 Ohm @ 500mA, 10V, and the Rds On Drain Source Resistance is 1.6 Ohms to 2.5 Ohms, and Power Max is 300mW, and the Pd Power Dissipation is 300 mW, and Packaging is Digi-ReelR Alternate Packaging, and the Package Case is TO-236-3, SC-59, SOT-23-3, it has an Operating Temperature range of -55°C ~ 150°C (TJ), and the Number of Channels is 1 Channel, and Mounting Style is SMD/SMT, and the Mounting Type is Surface Mount, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and Input Capacitance Ciss Vds is 24.5pF @ 20V, and the Id Continuous Drain Current is 320 mA, and Gate Charge Qg Vgs is 0.7nC @ 4.5V, and the FET Type is MOSFET N-Channel, Metal Oxide, and FET Feature is Standard, and the Fall Time is 9 ns, and Drain to Source Voltage Vdss is 60V, and the Current Continuous Drain Id 25°C is 320mA (Ta), and Configuration is Single, and the Channel Mode is Enhancement.

2N7002KTB with circuit diagram manufactured by PANJIT. The 2N7002KTB is available in SOT423 Package, is part of the IC Chips.