The PMV20ENR parts are MOSFET 30V N-CHANNEL TRENCH MOSFET, manufactured by NEXPERIA are available for purchase at Freesky Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The PMV20ENR components of Freesky Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.
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The PMV1-P10-CY is METRIC PIN TERM VINYL INSULATE 0, that includes Red Color, they are designed to operate with a Bulk Packaging, Termination is shown on datasheet note for use in a Crimp, that offers Features features such as Brazed Seam, Serrated Termination, Wire Gauge is designed to work in 18-20 AWG, as well as the Insulated Insulation, the device can also be used as 0.831" (21.10mm) Length Overall. In addition, the Length Pin is 0.470" (11.94mm), the device is offered in Circular - 0.080" (2.03mm) Dia Pin Diameter, the device has a 0.150" (3.81mm) of Insulation Diameter.
The PMV1-P12B-3K is CONN WIRE PIN 18-20AWG INS RED, that includes 18-20 AWG Wire Gauge, they are designed to operate with a Crimp Termination, Pin Diameter is shown on datasheet note for use in a Circular - 0.080" (2.03mm) Dia, that offers Packaging features such as Tape & Reel (TR), Length Pin is designed to work in 0.394" (10.00mm), as well as the 0.890" (22.61mm) Length Overall, the device can also be used as 0.150" (3.81mm) Insulation Diameter. In addition, the Insulation is Insulated, the device is offered in Red Color.
The PMV2024GY is POLE MOUNT KIT PMK SERIES, that includes Mounting Kit Accessory Type, they are designed to operate with a PMK Series For Use With Related Products, Series is shown on datasheet note for use in a PMK.
Series
-
Packaging
Digi-ReelR Alternate Packaging
Unit Weight
0.050717 oz
Mounting Style
SMD/SMT
Package Case
TO-236-3, SC-59, SOT-23-3
Technology
Si
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Number of Channels
1 Channel
Supplier Device Package
TO-236AB (SOT23)
Configuration
Single
FET Type
MOSFET N-Channel, Metal Oxide
Power Max
510mW
Transistor Type
1 N-Channel
Drain to Source Voltage Vdss
30V
Input Capacitance Ciss Vds
435pF @ 15V
FET Feature
Logic Level Gate
Current Continuous Drain Id 25°C
6A (Ta)
Rds On Max Id Vgs
21 mOhm @ 6A, 10V
Vgs th Max Id
2V @ 250μA
Gate Charge Qg Vgs
10.8nC @ 10V
Pd Power Dissipation
1.2 W
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Fall Time
8 ns
Rise Time
17 ns
Vgs Gate Source Voltage
+/- 20 V
Id Continuous Drain Current
7.6 A
Vds Drain Source Breakdown Voltage
30 V
Vgs th Gate Source Threshold Voltage
1 V
Rds On Drain Source Resistance
34 mOhms
Transistor Polarity
N-Channel
Typical Turn Off Delay Time
9 ns
Typical Turn On Delay Time
9 ns
Qg Gate Charge
7.2 nC
Forward Transconductance Min
8 S
Channel Mode
Enhancement