Co-Pack IGBT up to 20A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
Feature
UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge configurations
Industry standard TO-247AC package
Lead-free
Generation -4 IGBT's offer highest efficiencies available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less/no snubbing
Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
Applications
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
