The SI4532CDY-T1-GE3 parts are Trans MOSFET N/P-CH 30V 4.9A/3.4A 8-Pin SOIC N T/R, manufactured by VISHAY SILICONIX are available for purchase at freesky Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The SI4532CDY-T1-GE3 components of freesky Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

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The Si4532CDY-T1-GE3 is MOSFET N/P-CH 30V 6A 8-SOIC, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI4532CDY-GE3, that offers Unit Weight features such as 0.006596 oz, Mounting Style is designed to work in SMD/SMT, as well as the 8-SOIC (0.154", 3.90mm Width) Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 2 Channel of Number of Channels, and Supplier Device Package is 8-SO, and the Configuration is Dual Dual Drain, and FET Type is N and P-Channel, and the Power Max is 2.78W, and Transistor Type is 1 N-Channel 1 P-Channel, and the Drain to Source Voltage Vdss is 30V, and Input Capacitance Ciss Vds is 305pF @ 15V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 6A, 4.3A, and the Rds On Max Id Vgs is 47 mOhm @ 3.5A, 10V, and Vgs th Max Id is 3V @ 250μA, and the Gate Charge Qg Vgs is 9nC @ 10V, and Pd Power Dissipation is 2.78 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 6 nS 7.7 nS, and Rise Time is 12 nS 13 nS, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 6 A, and the Vds Drain Source Breakdown Voltage is 30 V, and Rds On Drain Source Resistance is 38 mOhms 73 mOhms, and the Transistor Polarity is N-Channel P-Channel, and Typical Turn Off Delay Time is 14 nS 17 nS, and the Typical Turn On Delay Time is 7 nS 5.5 nS, and Qg Gate Charge is 6 nC 7.8 nC, and the Forward Transconductance Min is 7 S 7 S, and Channel Mode is Enhancement.

SI4532AEY-T1 with user guide manufactured by VISHAY. The SI4532AEY-T1 is available in SOP-8 Package, is part of the IC Chips.

SI4532CDY with circuit diagram manufactured by SI. The SI4532CDY is available in SOP-8 Package, is part of the FETs - Arrays.

SI4532CDY-T1 with EDA / CAD Models manufactured by VISHAY. The SI4532CDY-T1 is available in SO-8 Package, is part of the FETs - Arrays.