The SST25VF080B-50-4I-S2AF-T devices are enhanced with improved operating frequency for lower power consumption. SST25VF080B-50-4I-S2AF-T SPI serial flash memories are manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
Feature
Single Voltage Read and Write Operations– 2.7-3.6V
Serial Interface Architecture
Superior Reliability
Low Power Consumption:
Program & Erase Current: 30mA (max)
Active Read Current: 10 mA (typical)
Standby Current: 5 µA (typical)
Flexible Erase Capability
Fast Erase and Byte-Program:
Chip-Erase Time: 35 ms (typical)
Sector-/Block-Erase Time: 18 ms (typical)
Byte-Program Time: 7 µs (typical)
Auto Address Increment (AAI) Programming
End-of-Write Detection
Hold Pin (HOLD#)
Write Protection (WP#)
Software Write Protection
Temperature Range
Packages Available– 8-lead SOIC (200 mils)– 8-contact WSON (6mm x 5mm)– 8-lead PDIP (300 mils)– 8-bump CSP
All devices are RoHS compliant
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
