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The SQD50N10-8M9L-GE3 is MOSFET 100V 50A 45watt N-CH Automotive, that includes SQ Series Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.050717 oz, that offers Mounting Style features such as SMD/SMT, Tradename is designed to work in TrenchFET, as well as the TO-252-3 Package Case, the device can also be used as Si Technology. In addition, the Number of Channels is 1 Channel, the device is offered in Single Configuration, the device has a 1 N-Channel of Transistor Type, and Pd Power Dissipation is 136 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 120 ns, and Rise Time is 12 ns, and the Id Continuous Drain Current is 50 A, and Vds Drain Source Breakdown Voltage is 100 V, and the Vgs th Gate Source Threshold Voltage is 2 V, and Rds On Drain Source Resistance is 8.99 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 95 ns, and the Typical Turn On Delay Time is 12 ns, and Qg Gate Charge is 46 nC.

SQD50N10-8m9L_GE3 with user guide, that includes 2 V Vgs th Gate Source Threshold Voltage, they are designed to operate with a 100 V Vds Drain Source Breakdown Voltage, Unit Weight is shown on datasheet note for use in a 0.050717 oz, that offers Typical Turn On Delay Time features such as 12 ns, Typical Turn Off Delay Time is designed to work in 95 ns, as well as the N-Channel Transistor Polarity, the device can also be used as TrenchFET Tradename. In addition, the Technology is Si, the device is offered in SQ Series Series, the device has a 12 ns of Rise Time, and Rds On Drain Source Resistance is 8.99 mOhms, and the Qg Gate Charge is 46 nC, and Pd Power Dissipation is 136 W, and the Packaging is Reel, and Package Case is TO-252-3, and the Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 175 C, and Id Continuous Drain Current is 50 A, and the Fall Time is 120 ns, and Configuration is Single.

SQD50P03-07_GE3 with circuit diagram, it has an Maximum Operating Temperature range of + 175 C, they are designed to operate with a Reel Packaging, Series is shown on datasheet note for use in a SQ Series, that offers Technology features such as Si, Tradename is designed to work in TrenchFET, as well as the P-Channel Transistor Polarity, the device can also be used as - 30 V Vds Drain Source Breakdown Voltage.

SQD50P03-07-GE3 with EDA / CAD Models manufactured by VIS. The SQD50P03-07-GE3 is available in TO-252 Package, is part of the IC Chips.