QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Feature
12.8A, 100V, RDS(on)= 180mΩ(Max.) @VGS = 10 V, ID = 6.4A
Low gate charge ( Typ. 12nC)
Low Crss ( Typ. 20pF)
100% avalanche tested
175°C maximum junction temperature rating
Applications