High-performance 64K EEPROM offers access times to 55ns with power dissipation of 220mW. Deselected, CMOS standby current is less than 100μA .It is accessed like static RAM for the read or write cycle without external components. It contains a 64-byte page register to allow writing of up to 64 bytes simultaneously.The EEPROM features Internal error correction for extended endurance and improved data retention. Optional software data protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.
Feature
8 Kbits x 8 (64 Kbit)
5 V ±10% Supply
Parallel Interface
Self-Timed Erase and Write Cycles (10 ms max)
Page Write and Byte Write
Data Polling for end of write detection
2 ms Maximum Option see AT28HC64BF datasheet
Low Power Consumption
Write-Protection
Hardware Protection
Software Data Protect
More than 100,000 erase/write cycles
Data retention > 10 years
Temperature Ranges
Available in Green (Pb/Halide-free) Packaging Only
32-lead, Plastic J-leaded Chip Carrier (PLCC)
28-lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC)
28-lead, Plastic Thin Small Outline Package (TSOP)
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
