The SISS27DN-T1-GE3 parts are Trans MOSFET P-CH 30V 23A 8-Pin PowerPAK 1212-S T/R, manufactured by VISHAY SILICONIX are available for purchase at freesky Electronics website. Here you can find a wide variety of types and values of electronic parts from the world's leading manufacturers. The SISS27DN-T1-GE3 components of freesky Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

The production status marked on freesky558.com is for reference only. If you did not find what you were looking for, you can get more value information by email, such as the SISS27DN-T1-GE3 Inventory quantity, preferential price, and manufacturer. We are always happy to hear from you so feel free to contact us.

The SISS23DN-T1-GE3 is MOSFET P-CH 20V 50A PPAK 1212-8S, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Tradename features such as TrenchFET Power MOSFET, Package Case is designed to work in 8-VDFN Exposed Pad, as well as the Si Technology, it has an Operating Temperature range of -50°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a PowerPAKR 1212-8S of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET P-Channel, Metal Oxide, and Power Max is 57W, and the Transistor Type is 1 P-Channel, and Drain to Source Voltage Vdss is 20V, and the Input Capacitance Ciss Vds is 8840pF @ 15V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 50A (Tc), and Rds On Max Id Vgs is 4.5 mOhm @ 20A, 4.5V, and the Vgs th Max Id is 900mV @ 250μA, and Gate Charge Qg Vgs is 300nC @ 10V, and the Pd Power Dissipation is 57 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 50 ns, and the Rise Time is 50 ns, and Vgs Gate Source Voltage is 8 V, and the Id Continuous Drain Current is - 50 A, and Vds Drain Source Breakdown Voltage is - 20 V, and the Vgs th Gate Source Threshold Voltage is - 0.4 V to - 0.9 V, and Rds On Drain Source Resistance is 4.5 mOhms, and the Transistor Polarity is P-Channel, and Typical Turn Off Delay Time is 140 ns, and the Typical Turn On Delay Time is 45 ns, and Qg Gate Charge is 93 nC, and the Forward Transconductance Min is 44 S, and Channel Mode is Enhancement.

The SISNAP915DK is RF EVAL 915MHZ SYNAPSE DEV KIT, that includes Transceiver, Microcontroller Type, they are designed to operate with a Si1000 Tool Is For Evaluation Of, Supplied Contents is shown on datasheet note for use in a 2 Boards, Antennas, Batteries, Cables, CD, Power Adapters, that offers Series features such as SiSNAP915, Product is designed to work in Development Kits, as well as the 915MHz Frequency, the device can also be used as Si1000 For Use With Related Products. In addition, the Description Function is Synapse Network Appliance Protocol (SNAP) network development kit.

The SISNAP915EK is RF EVAL 915MHZ MODULE ANTENNA, that includes Synapse Network Appliance Protocol (SNAP) stand-alone module Description Function, they are designed to operate with a Si1000 For Use With Related Products, Frequency is shown on datasheet note for use in a 915MHz, that offers Product features such as Development Kits, Series is designed to work in SiSNAP915, as well as the Board, Antenna Supplied Contents, the device can also be used as Si1000 Tool Is For Evaluation Of. In addition, the Type is Transceiver, Microcontroller.