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The SIR878ADP-T1-GE3 is MOSFET 100V 14mOhm@10V 40A N-Ch MV T-FET, that includes SIRxxxADP Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a SIR878ADP-GE3, that offers Unit Weight features such as 0.017870 oz, Mounting Style is designed to work in SMD/SMT, as well as the ThunderFET TrenchFET Tradename, the device can also be used as SO-8 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a Single of Configuration, and Transistor Type is 1 N-Channel, and the Pd Power Dissipation is 44.5 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 8 ns, and the Rise Time is 13 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 40 A, and Vds Drain Source Breakdown Voltage is 100 V, and the Vgs th Gate Source Threshold Voltage is 2.8 V, and Rds On Drain Source Resistance is 14 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 25 ns, and the Typical Turn On Delay Time is 12 ns, and Qg Gate Charge is 13.9 nC, and the Forward Transconductance Min is 44 S, and Channel Mode is Enhancement.

The SIR876DP-T1-GE3 is MOSFET N-CH 100V 40A PPAK SO-8 manufactured by VISHAY. The SIR876DP-T1-GE3 is available in PowerPAK® SO-8 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 100V 40A PPAK SO-8, N-Channel 100V 40A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK? SO-8, Trans MOSFET N-CH 100V 15.2A 8-Pin PowerPAK SO T/R.

SIR878DP-T1 with circuit diagram manufactured by VISHAY. The SIR878DP-T1 is available in QFN Package, is part of the FETs - Single.