STD10P6F6

STD10P6F6

Manufacturers：STM
QTy：67800
Partno：NEW
Packing：: D2PAK
Content：In stock

Specifications：

STD10P6F6 Product Details

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

Feature

Verylowon-resistance
Verylowgatecharge
Highavalancheruggedness
Lowgatedrivepowerloss

Technical Parameters

Transistor Polarity
P-Channel
Drain Source Breakdown Voltage
60 V
Gate Source Breakdown Voltage
20 V
Continuous Drain Current
10 A
Resistance Drain Source RDS (on)
0.18 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Packaging
Reel
Fall Time
10 ns
Gate Charge Qg
7 nC
Power Dissipation
35 W
Rise Time
7 ns
Typical Turn Off Delay Time
16.5 ns

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