The X28HC256JIZ-12T1 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256JIZ-12T1 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0.8s. The X28HC256JIZ-12T1 also featuresDATA polling and Toggle bit polling, two methods of providing early end of write detection. The X28HC256JIZ-12T1 also supports the JEDEC standard software data protection feature for protecting against inadvertent writes during power-up and power-down. Endurance for the X28HC256JIZ-12T1 is specified as a minimum 100,000 write cycles per byte and an inherent data retention of 100 years
Feature
Access time: 90ns
Simple byte and page write
Single 5V supply
No external high voltages or VP-P control circuits
Self timed
No erase before write
No complex programming algorithms
No overerase problem
Low power CMOS
Active: 60mA
Standby: 500μA
Software data protection
Protects data against system level inadvertent writes
High speed page write capability
Highly reliable Direct Write™ cell
Endurance: 100,000 cycles
Data retention: 100 years
Early end of write detection
DATA polling
Toggle bit polling
RoHS compliant