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The CSD18532Q5B is MOSFET N-CH 60V 23A 8VSON, that includes NexFET? Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Tradename features such as NexFET, Package Case is designed to work in 8-PowerTDFN, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a 8-VSON (5x6) of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 3.2W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 60V, and the Input Capacitance Ciss Vds is 5070pF @ 30V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 100A (Ta), and Rds On Max Id Vgs is 3.2 mOhm @ 25A, 10V, and the Vgs th Max Id is 2.2V @ 250μA, and Gate Charge Qg Vgs is 58nC @ 10V, and the Pd Power Dissipation is 3.2 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 3.1 ns, and the Rise Time is 7.2 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 172 A, and Vds Drain Source Breakdown Voltage is 60 V, and the Vgs th Gate Source Threshold Voltage is 1.8 V, and Rds On Drain Source Resistance is 4.3 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 22 ns, and the Typical Turn On Delay Time is 5.8 ns, and Qg Gate Charge is 44 nC, and the Forward Transconductance Min is 143 S.

The CSD18533KCS is MOSFET 60V N-Chnl NxFT Pwr MSFT .., that includes 1.9 V Vgs th Gate Source Threshold Voltage, they are designed to operate with a 20 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 60 V, that offers Unit Weight features such as 0.211644 oz, Typical Turn On Delay Time is designed to work in 5.7 ns, as well as the 13 ns Typical Turn Off Delay Time, the device can also be used as 1 N-Channel Transistor Type. In addition, the Transistor Polarity is N-Channel, the device is offered in NexFET Tradename, the device has a Si of Technology, and Series is CSD18533KCS, and the Rise Time is 4.8 ns, and Rds On Drain Source Resistance is 9 mOhms, and the Qg Gate Charge is 28 nC, and Pd Power Dissipation is 160 W, and the Packaging is Tube, and Package Case is TO-220-3, and the Number of Channels is 1 Channel, and Mounting Style is Through Hole, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and the Id Continuous Drain Current is 114 A, and Forward Transconductance Min is 150 S, and the Fall Time is 3.2 ns, and Configuration is Single.

The CSD18532Q5BT is "MOSFET 60V manufactured by TI. The CSD18532Q5BT is available in VSON-8 Package, is part of the Transistors - FETs, MOSFETs - Single, , and with support for "MOSFET 60V, Trans MOSFET N-CH Si 60V 100A 8-Pin VSON-CLIP EP T/R, MOSFET 60V, N-channel NexFET Pwr MOSFET.