This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. The BSS138LT1G is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Feature
0.22 A, 50 V. RDS(ON) = 3.5 Ω @ VGS = 10 V. RDS(ON) = 6.0 Ω @ VGS = 4.5 V
High density cell design for extremely low RDS(ON).
Rugged and Reliable.
Compact industry standard SOT-23 surface mount package.
Applications
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
