The CSD18563Q5A parts are Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R, manufactured by TI are available for purchase at freesky Electronics website. Here you can find a wide variety of types and values of electronic parts from the world's leading manufacturers. The CSD18563Q5A components of freesky Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

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The CSD18542KCS is MOSFET 60V N-channel NexFET Power MOSFET, that includes CSD18542KCS Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.211644 oz, that offers Mounting Style features such as Through Hole, Tradename is designed to work in NexFET, as well as the TO-220-3 Package Case, the device can also be used as Si Technology. In addition, the Number of Channels is 1 Channel, the device is offered in Single Configuration, the device has a 1 N-Channel of Transistor Type, and Pd Power Dissipation is 200 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 21 ns, and Rise Time is 5 ns, and the Vgs Gate Source Voltage is +/- 20 V, and Id Continuous Drain Current is 200 A, and the Vds Drain Source Breakdown Voltage is 60 V, and Vgs th Gate Source Threshold Voltage is 1.5 V, and the Rds On Drain Source Resistance is 5.1 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 18 ns, and Typical Turn On Delay Time is 6 ns, and the Qg Gate Charge is 44 nC, and Forward Transconductance Min is 198 S, and the Channel Mode is Enhancement.

The CSD18542KTTT is MOSFET 60V N-Channel NexFET Pwr MOSFET, that includes 1.8 V Vgs th Gate Source Threshold Voltage, they are designed to operate with a +/- 20 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 60 V, that offers Typical Turn On Delay Time features such as 6 ns, Typical Turn Off Delay Time is designed to work in 2 ns, as well as the 1 N-Channel Transistor Type, the device can also be used as N-Channel Transistor Polarity. In addition, the Tradename is NexFET, the device is offered in Si Technology, the device has a CSD18542KTT of Series, and Rise Time is 4 ns, and the Rds On Drain Source Resistance is 3.3 mOhm, and Qg Gate Charge is 44 nC, and the Pd Power Dissipation is 250 W, and Packaging is Reel, and the Package Case is TO-263-3, and Number of Channels is 1 Channel, and the Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 175 C, and Id Continuous Drain Current is 200 A, and the Forward Transconductance Min is 198 S, and Fall Time is 2 ns, and the Configuration is Single, and Channel Mode is Enhancement.

The CSD18542KTT is MOSFET 60V N-Channel NexFET Power MOSFET 3-DDPAK/TO-263 -55 to 175, that includes Reel Packaging, they are designed to operate with a CSD18542KTT Series, Technology is shown on datasheet note for use in a Si.