The IRFR13N20DTRPBF parts are Trans MOSFET N-CH 200V 13A 3-Pin(2+Tab) DPAK T/R, manufactured by INFINEON are available for purchase at freesky Electronics website. Here you can find a wide variety of types and values of electronic parts from the world's leading manufacturers. The IRFR13N20DTRPBF components of freesky Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.
The production status marked on freesky558.com is for reference only. If you did not find what you were looking for, you can get more value information by email, such as the IRFR13N20DTRPBF Inventory quantity, preferential price, and manufacturer. We are always happy to hear from you so feel free to contact us.
The IRFR13N20DPBF is MOSFET N-CH 200V 13A DPAK, that includes Tube Packaging, they are designed to operate with a 0.139332 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 110 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 10 ns, and Rise Time is 27 ns, and the Vgs Gate Source Voltage is 30 V, and Id Continuous Drain Current is 14 A, and the Vds Drain Source Breakdown Voltage is 200 V, and Rds On Drain Source Resistance is 235 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 17 ns, and the Typical Turn On Delay Time is 11 ns, and Qg Gate Charge is 25 nC, and the Channel Mode is Enhancement.
The IRFR13N20DTRLP is MOSFET N-CH 200V 13A DPAK, that includes 30 V Vgs Gate Source Voltage, they are designed to operate with a 200 V Vds Drain Source Breakdown Voltage, Unit Weight is shown on datasheet note for use in a 0.139332 oz, that offers Typical Turn On Delay Time features such as 11 ns, Typical Turn Off Delay Time is designed to work in 17 ns, as well as the 1 N-Channel Transistor Type, the device can also be used as N-Channel Transistor Polarity. In addition, the Technology is Si, the device is offered in 27 ns Rise Time, the device has a 165 mOhms of Rds On Drain Source Resistance, and Qg Gate Charge is 25 nC, and the Pd Power Dissipation is 110 W, and Packaging is Reel, and the Package Case is TO-252-3, and Number of Channels is 1 Channel, and the Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, and the Id Continuous Drain Current is 14 A, and Fall Time is 10 ns, and the Configuration is Single, and Channel Mode is Enhancement.
IRFR13N20DTRLPBF with circuit diagram manufactured by IR. The IRFR13N20DTRLPBF is available in TO-252 Package, is part of the IC Chips.
Transistor Polarity
N-Channel
Drain Source Breakdown Voltage
200 V
Gate Source Breakdown Voltage
30 V
Continuous Drain Current
14 A
Resistance Drain Source RDS (on)
235 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
DPAK
Packaging
Reel
Fall Time
10 ns
Gate Charge Qg
25 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
110 W
Rise Time
27 ns
Factory Pack Quantity
2000
Typical Turn Off Delay Time
17 ns
ModelsDescriptionOperation
IRFR120PBFMOSFET, VISHAY SILICONIX, TO-252Compare
IRFR120ZPBFMOSFET, INFINEON, TO-252Compare
IRFR120NPower FET, INFINEON, TO-252Compare
IRFR120ZVoltage regulator tube, INFINEON, TO-252Compare
IRFR12N25Dpower semiconductor devices, INFINEON, TO-252Compare