ON Semiconductor NGTB25N and NGTB40N Isolated Gate Bipolar Transistors (IGBT) feature a robust and cost effective Ultra Field Stop Trench construction. Low switch losses and an ultra fast recovery diode make them ideal for high frequency solar, UPS and inverter welder applications. Incorporated into these devices is a soft and fast co-packaged free wheeling diode with a low forward voltage.Features Extremely Efficient Trench with Ultra Field Stop TechnologyTJmax = 175�CSoft Fast Reverse Recovery DiodeOptimized for High Speed SwitchingLow VCESTO247-3 packagePbFree Applications Solar Inverter Uninterruptible Power Inverter Supplies (UPS) Welding Motor Drive Inverter Industrial Switching

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Ultra Field Stop IGBT -1200V 40A

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